Discover 53 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Applications Operating Temperature Capacitance @ Frequency Current - Peak Pulse (10/1000μs) Unidirectional Channels Bidirectional Channels Voltage - Reverse Standoff (Typ) Voltage - Breakdown (Min) Voltage - Clamping (Max) @ Ipp Power - Peak Pulse
DF2B6.8ACT,L3F
Toshiba Semiconductor and Storage
299,950
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 7VC CST2
Tape & Reel (TR) General Purpose - 9pF @ 1MHz 1A (8/20μs) - 1 5V (Max) 5.8V 7V (Typ) -
DF2B6.8ACT,L3F
Toshiba Semiconductor and Storage
309,046
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 7VC CST2
Cut Tape (CT) General Purpose - 9pF @ 1MHz 1A (8/20μs) - 1 5V (Max) 5.8V 7V (Typ) -
DF2B6.8ACT,L3F
Toshiba Semiconductor and Storage
309,046
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 7VC CST2
- General Purpose - 9pF @ 1MHz 1A (8/20μs) - 1 5V (Max) 5.8V 7V (Typ) -
DF2B6.8M1ACT,L3F
Toshiba Semiconductor and Storage
10,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 20VC CST2
Tape & Reel (TR) General Purpose - 0.3pF @ 1MHz 2.5A (8/20μs) - 1 5V (Max) 6V 20V 50W
DF2B6.8M1ACT,L3F
Toshiba Semiconductor and Storage
18,300
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 20VC CST2
Cut Tape (CT) General Purpose - 0.3pF @ 1MHz 2.5A (8/20μs) - 1 5V (Max) 6V 20V 50W
DF2B6.8M1ACT,L3F
Toshiba Semiconductor and Storage
18,300
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 5VWM 20VC CST2
- General Purpose - 0.3pF @ 1MHz 2.5A (8/20μs) - 1 5V (Max) 6V 20V 50W
DF2S16CT,L3F
Toshiba Semiconductor and Storage
10,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 12VWM
Tape & Reel (TR) General Purpose - 10pF @ 1MHz - 1 - 12V 15.3V - -
DF2S16CT,L3F
Toshiba Semiconductor and Storage
19,815
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 12VWM
Cut Tape (CT) General Purpose - 10pF @ 1MHz - 1 - 12V 15.3V - -
DF2S16CT,L3F
Toshiba Semiconductor and Storage
19,815
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 12VWM
- General Purpose - 10pF @ 1MHz - 1 - 12V 15.3V - -
DF2S30CT,L3F
Toshiba Semiconductor and Storage
10,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 23VWM
Tape & Reel (TR) General Purpose - 7.2pF @ 1MHz - 1 - 23V 28V - -
DF2S30CT,L3F
Toshiba Semiconductor and Storage
19,620
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 23VWM
Cut Tape (CT) General Purpose - 7.2pF @ 1MHz - 1 - 23V 28V - -
DF2S30CT,L3F
Toshiba Semiconductor and Storage
19,620
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 23VWM
- General Purpose - 7.2pF @ 1MHz - 1 - 23V 28V - -
DF2B7ACT,L3F
Toshiba Semiconductor and Storage
10,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 20VC 4A IPP CST2
Tape & Reel (TR) - 150°C (TJ) 8.5pF @ 1MHz 4A (8/20μs) - 1 5.5V (Max) 5.8V 20V 80W
DF2B7ACT,L3F
Toshiba Semiconductor and Storage
19,700
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 20VC 4A IPP CST2
Cut Tape (CT) - 150°C (TJ) 8.5pF @ 1MHz 4A (8/20μs) - 1 5.5V (Max) 5.8V 20V 80W
DF2B7ACT,L3F
Toshiba Semiconductor and Storage
19,700
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 20VC 4A IPP CST2
- - 150°C (TJ) 8.5pF @ 1MHz 4A (8/20μs) - 1 5.5V (Max) 5.8V 20V 80W
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
10,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 15VC 2A IPP CST2
Tape & Reel (TR) - 150°C (TJ) 0.35pF @ 1MHz 2A (8/20μs) 1 - 5.5V (Max) 5.6V 15V 30W
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
19,869
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 15VC 2A IPP CST2
Cut Tape (CT) - 150°C (TJ) 0.35pF @ 1MHz 2A (8/20μs) 1 - 5.5V (Max) 5.6V 15V 30W
DF2S6M4CT,L3F
Toshiba Semiconductor and Storage
19,869
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 15VC 2A IPP CST2
- - 150°C (TJ) 0.35pF @ 1MHz 2A (8/20μs) 1 - 5.5V (Max) 5.6V 15V 30W
DF2B6M4CT,L3F
Toshiba Semiconductor and Storage
40,000
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 15VC 2A IPP CST2
Tape & Reel (TR) - 150°C (TJ) 0.2pF @ 1MHz 2A (8/20μs) - 1 5.5V (Max) 5.6V 15V 30W
DF2B6M4CT,L3F
Toshiba Semiconductor and Storage
40,745
3 days
-
MOQ: 1  MPQ: 1
TVS DIODE 15VC 2A IPP CST2
Cut Tape (CT) - 150°C (TJ) 0.2pF @ 1MHz 2A (8/20μs) - 1 5.5V (Max) 5.6V 15V 30W