Discover 40 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Function Voltage - Supply Operating Temperature Package / Case Output Type Size / Dimension Ratings Height Frequency Stability Current - Supply (Max) Frequency Stability (Total)
SIT3808AI-22-XXXX-000.FP0000X
SiTime
683
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT3808 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS VCXO 0.126" L x 0.098" W (3.20mm x 2.50mm) - 0.031" (0.80mm) ±25ppm 33mA ±25ppm
SIT3808AI-D2-XXXX-000.FP0000X
SiTime
844
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT3808 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 6-SMD,No Lead LVCMOS MEMS VCXO 0.276" L x 0.197" W (7.00mm x 5.00mm) - 0.039" (1.00mm) ±25ppm 33mA ±25ppm
SIT3808AI-C2-XXXX-000.FP0000X
SiTime
402
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT3808 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 6-SMD,No Lead LVCMOS MEMS VCXO 0.197" L x 0.126" W (5.00mm x 3.20mm) - 0.031" (0.80mm) ±25ppm 33mA ±25ppm
SIT3808AI-G2-XXXX-000.FP0000G
SiTime
Inquiry
-
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT3808 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS VCXO 0.106" L x 0.094" W (2.70mm x 2.40mm) - 0.031" (0.80mm) ±25ppm 33mA ±25ppm
SIT8208AI-21-XXX-000.FP0000X
SiTime
452
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT8208 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 0.126" L x 0.098" W (3.20mm x 2.50mm) - 0.031" (0.80mm) ±20ppm 33mA ±20ppm
SIT8208AI-31-XXX-000.FP0000X
SiTime
677
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT8208 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 0.197" L x 0.126" W (5.00mm x 3.20mm) - 0.031" (0.80mm) ±20ppm 33mA ±20ppm
SIT8208AI-81-XXX-000.FP0000X
SiTime
737
3 days
-
MOQ: 1  MPQ: 1
PROG OSC BLANK 1-80MHZ LVCMOS
SiT8208 Enable/Disable,Standby 1.8V,2.5 V ~ 3.3 V -40°C ~ 85°C 4-SMD,No Lead LVCMOS MEMS (Silicon) 0.276" L x 0.197" W (7.00mm x 5.00mm) - 0.039" (1.00mm) ±20ppm 33mA ±20ppm
DSC6003ME1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Enable/Disable 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6011ME1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6003MI1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Enable/Disable 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6011MI1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6013MI1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6003ME2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Enable/Disable 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6011ME2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6013ME2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6003MI2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Enable/Disable 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6011MI2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6013MI2A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -40°C ~ 85°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.079" L x 0.063" W (2.00mm x 1.60mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±25ppm
DSC6003HE1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Enable/Disable 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.063" L x 0.047" W (1.60mm x 1.20mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm
DSC6011HE1A-000.0000T
Microchip Technology
1,000
3 days
-
MOQ: 1  MPQ: 1
PROG OSC 1MHZ-80MHZ CMOS
DSC60XX Standby 1.71 V ~ 3.63 V -20°C ~ 70°C 4-SMD,No Lead CMOS MEMS (Silicon) 0.063" L x 0.047" W (1.60mm x 1.20mm) AEC-Q100 0.035" (0.89mm) - 1.3mA (Typ) ±50ppm