Discover 27 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Vce Saturation (Max) @ Ib,Ic DC Current Gain (hFE) (Min) @ Ic,Vce Frequency - Transition
HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
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-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
Tape & Reel (TR) 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 350 @ 2mA,6V 100MHz
HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
Cut Tape (CT) 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 350 @ 2mA,6V 100MHz
HN3C51F-BL(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
- 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 350 @ 2mA,6V 100MHz
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
Tape & Reel (TR) 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
Cut Tape (CT) 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz
HN3C51F-GR(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 120V 0.1A SM6
- 150°C (TJ) 2 NPN (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz
HN1C01FYTE85LF
Toshiba Semiconductor and Storage
3,000
3 days
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
Tape & Reel (TR) 125°C (TJ) 2 NPN (Dual) 150mA 50V 250mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1C01FYTE85LF
Toshiba Semiconductor and Storage
928
3 days
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
Cut Tape (CT) 125°C (TJ) 2 NPN (Dual) 150mA 50V 250mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1C01FYTE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
- 125°C (TJ) 2 NPN (Dual) 150mA 50V 250mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage
3,000
3 days
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A SM6
Tape & Reel (TR) 125°C (TJ) 2 PNP (Dual) 150mA 50V 300mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage
2,990
3 days
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A SM6
Cut Tape (CT) 125°C (TJ) 2 PNP (Dual) 150mA 50V 300mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1A01F-Y(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A SM6
- 125°C (TJ) 2 PNP (Dual) 150mA 50V 300mV @ 10mA,100mA 120 @ 2mA,6V 80MHz
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 20V 0.3A SM6
Tape & Reel (TR) 150°C (TJ) 2 NPN (Dual) 300mA 20V 100mV @ 3mA,30mA 350 @ 4mA,2V 30MHz
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage
646
3 days
-
MOQ: 1  MPQ: 1
TRANS 2NPN 20V 0.3A SM6
Cut Tape (CT) 150°C (TJ) 2 NPN (Dual) 300mA 20V 100mV @ 3mA,30mA 350 @ 4mA,2V 30MHz
HN1C03F-B(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 20V 0.3A SM6
- 150°C (TJ) 2 NPN (Dual) 300mA 20V 100mV @ 3mA,30mA 350 @ 4mA,2V 30MHz
HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
98
3 days
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
Cut Tape (CT) 125°C (TJ) 2 NPN (Dual) 150mA 50V 250mV @ 10mA,100mA 120 @ 2mA,6V 800MHz
HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
- 125°C (TJ) 2 NPN (Dual) 150mA 50V 250mV @ 10mA,100mA 120 @ 2mA,6V 800MHz
HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 120V 0.1A SM6
Tape & Reel (TR) 150°C (TJ) 2 PNP (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz
HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 120V 0.1A SM6
Cut Tape (CT) 150°C (TJ) 2 PNP (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz
HN3A51F(TE85L,F)
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 120V 0.1A SM6
- 150°C (TJ) 2 PNP (Dual) 100mA 120V 300mV @ 1mA,10mA 200 @ 2mA,6V 100MHz