Operating Temperature:
Supplier Device Package:
Power - Max:
Transistor Type:
Vce Saturation (Max) @ Ib,Ic:
DC Current Gain (hFE) (Min) @ Ic,Vce:
Discover 5 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max Transistor Type Vce Saturation (Max) @ Ib,Ic DC Current Gain (hFE) (Min) @ Ic,Vce
HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
98
3 days
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
Cut Tape (CT) 125°C (TJ) SC-74,SOT-457 SM6 300mW 2 NPN (Dual) 250mV @ 10mA,100mA 120 @ 2mA,6V
HN1C01F-GR(TE85L,F
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2NPN 50V 0.15A SM6
- 125°C (TJ) SC-74,SOT-457 SM6 300mW 2 NPN (Dual) 250mV @ 10mA,100mA 120 @ 2mA,6V
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A ES6
Tape & Reel (TR) 150°C (TJ) SOT-563,SOT-666 ES6 100mW 2 PNP (Dual) 300mV @ 10mA,100mA 200 @ 2mA,6V
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A ES6
Cut Tape (CT) 150°C (TJ) SOT-563,SOT-666 ES6 100mW 2 PNP (Dual) 300mV @ 10mA,100mA 200 @ 2mA,6V
HN2A01FE-GR(TE85LF
Toshiba Semiconductor and Storage
Inquiry
-
-
MOQ: 1  MPQ: 1
TRANS 2PNP 50V 0.15A ES6
- 150°C (TJ) SOT-563,SOT-666 ES6 100mW 2 PNP (Dual) 300mV @ 10mA,100mA 200 @ 2mA,6V