Operating Temperature:
Supplier Device Package:
Power - Max:
Transistor Type:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
Current - Collector Cutoff (Max):
DC Current Gain (hFE) (Min) @ Ic,Vce:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max Transistor Type Current - Collector (Ic) (Max) Voltage - Collector Emitter Breakdown (Max) Current - Collector Cutoff (Max) DC Current Gain (hFE) (Min) @ Ic,Vce
BC857BM-TP
Micro Commercial Co
Inquiry
-
-
MOQ: 1  MPQ: 1
PNP PLASTIC-ENCAPSULATE BIPLOAR
Tape & Reel (TR) -55°C ~ 150°C (TJ) SC-101,SOT-883 SOT-883 - PNP 100mA 45V 15nA 220 @ 2mA,5V
BC857BM-TP
Micro Commercial Co
2,865
3 days
-
MOQ: 1  MPQ: 1
PNP PLASTIC-ENCAPSULATE BIPLOAR
Cut Tape (CT) -55°C ~ 150°C (TJ) SC-101,SOT-883 SOT-883 - PNP 100mA 45V 15nA 220 @ 2mA,5V
BC857BM-TP
Micro Commercial Co
2,865
3 days
-
MOQ: 1  MPQ: 1
PNP PLASTIC-ENCAPSULATE BIPLOAR
- -55°C ~ 150°C (TJ) SC-101,SOT-883 SOT-883 - PNP 100mA 45V 15nA 220 @ 2mA,5V
TBC847B,LM
Toshiba Semiconductor and Storage
3,000
3 days
-
MOQ: 1  MPQ: 1
X34 PB-F SOT-23 TRANSISTOR FOR L
Tape & Reel (TR) 150°C (TJ) TO-236-3,SC-59,SOT-23-3 SOT-23 320mW NPN 150mA 50V 30nA (ICBO) 200 @ 2mA,5V
TBC847B,LM
Toshiba Semiconductor and Storage
4,069
3 days
-
MOQ: 1  MPQ: 1
X34 PB-F SOT-23 TRANSISTOR FOR L
Cut Tape (CT) 150°C (TJ) TO-236-3,SC-59,SOT-23-3 SOT-23 320mW NPN 150mA 50V 30nA (ICBO) 200 @ 2mA,5V
TBC847B,LM
Toshiba Semiconductor and Storage
4,069
3 days
-
MOQ: 1  MPQ: 1
X34 PB-F SOT-23 TRANSISTOR FOR L
- 150°C (TJ) TO-236-3,SC-59,SOT-23-3 SOT-23 320mW NPN 150mA 50V 30nA (ICBO) 200 @ 2mA,5V