Drain to Source Voltage (Vdss):
Discover 86 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDS8984
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7A 23 mOhm @ 7A,10V 2.5V @ 250μA 13nC @ 10V 635pF @ 15V
FDS8984
ON Semiconductor
5,624
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7A 23 mOhm @ 7A,10V 2.5V @ 250μA 13nC @ 10V 635pF @ 15V
FDS8984
ON Semiconductor
5,624
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7A 8-SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7A 23 mOhm @ 7A,10V 2.5V @ 250μA 13nC @ 10V 635pF @ 15V
PHC2300,118
Nexperia USA Inc.
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V
PHC2300,118
Nexperia USA Inc.
7,512
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V
PHC2300,118
Nexperia USA Inc.
7,512
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 300V 8SOIC
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 300V 340mA,235mA 6 Ohm @ 170mA,10V 2V @ 1mA 6.24nC @ 10V 102pF @ 50V
FDS8978
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7.5A 18 mOhm @ 7.5A,10V 2.5V @ 250μA 26nC @ 10V 1270pF @ 15V
FDS8978
ON Semiconductor
7,075
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7.5A 18 mOhm @ 7.5A,10V 2.5V @ 250μA 26nC @ 10V 1270pF @ 15V
FDS8978
ON Semiconductor
7,075
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 7.5A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 30V 7.5A 18 mOhm @ 7.5A,10V 2.5V @ 250μA 26nC @ 10V 1270pF @ 15V
DMHC6070LSD-13
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CHA 60V 3.1A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A,2.4A 100 mOhm @ 1A,10V 3V @ 250μA 11.5nC @ 10V 731pF @ 20V
DMHC6070LSD-13
Diodes Incorporated
3,333
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CHA 60V 3.1A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A,2.4A 100 mOhm @ 1A,10V 3V @ 250μA 11.5nC @ 10V 731pF @ 20V
DMHC6070LSD-13
Diodes Incorporated
3,333
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CHA 60V 3.1A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N and 2 P-Channel (H-Bridge) Standard 60V 3.1A,2.4A 100 mOhm @ 1A,10V 3V @ 250μA 11.5nC @ 10V 731pF @ 20V
FDS8935
ON Semiconductor
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 80V 2.1A 8SOIC
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2.1A 183 mOhm @ 2.1A,10V 3V @ 250μA 19nC @ 10V 879pF @ 40V
FDS8935
ON Semiconductor
3,978
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 80V 2.1A 8SOIC
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2.1A 183 mOhm @ 2.1A,10V 3V @ 250μA 19nC @ 10V 879pF @ 40V
FDS8935
ON Semiconductor
3,978
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 80V 2.1A 8SOIC
- PowerTrench -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 P-Channel (Dual) Logic Level Gate 80V 2.1A 183 mOhm @ 2.1A,10V 3V @ 250μA 19nC @ 10V 879pF @ 40V
TSM9926DCS RLG
Taiwan Semiconductor Corporation
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 6A 8SOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2 N-Channel (Dual) Standard 20V 6A (Tc) 30 mOhm @ 6A,10V 600mV @ 250μA 7.1nC @ 4.5V 562pF @ 8V
TSM9926DCS RLG
Taiwan Semiconductor Corporation
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 6A 8SOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2 N-Channel (Dual) Standard 20V 6A (Tc) 30 mOhm @ 6A,10V 600mV @ 250μA 7.1nC @ 4.5V 562pF @ 8V
TSM9926DCS RLG
Taiwan Semiconductor Corporation
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CHANNEL 20V 6A 8SOP
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOP 2 N-Channel (Dual) Standard 20V 6A (Tc) 30 mOhm @ 6A,10V 600mV @ 250μA 7.1nC @ 4.5V 562pF @ 8V
TSM6866SDCA RVG
Taiwan Semiconductor Corporation
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 6A 8TSSOP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 2 N-Channel (Dual) Standard 20V 6A (Ta) 30 mOhm @ 6A,4.5V 600mV @ 250μA 5nC @ 4.5V 565pF @ 8V
TSM6866SDCA RVG
Taiwan Semiconductor Corporation
5,980
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 20V 6A 8TSSOP
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP 2 N-Channel (Dual) Standard 20V 6A (Ta) 30 mOhm @ 6A,4.5V 600mV @ 250μA 5nC @ 4.5V 565pF @ 8V