Discover 14 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMG6602SVT-7
Diodes Incorporated
51,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVT-7
Diodes Incorporated
53,816
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT23-6
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-23-6 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMG6602SVTQ-7
Diodes Incorporated
9,099
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TSOT26
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 N and P-Channel 30V 3.4A,2.8A 60 mOhm @ 3.1A,10V 2.3V @ 250μA 13nC @ 10V 400pF @ 15V
DMN3135LVT-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 2 N-Channel (Dual) 30V 3.5A 60 mOhm @ 3.1A,10V 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 2 N-Channel (Dual) 30V 3.5A 60 mOhm @ 3.1A,10V 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V
DMN3135LVT-7
Diodes Incorporated
8,894
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.5A TSOT26
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 TSOT-26 2 N-Channel (Dual) 30V 3.5A 60 mOhm @ 3.1A,10V 2.2V @ 250μA 4.1nC @ 4.5V 305pF @ 15V
TPS1120DR
Texas Instruments
10,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 15V 1.17A 8-SOIC
Tape & Reel (TR) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 P-Channel (Dual) 15V 1.17A 180 mOhm @ 1.5A,10V 1.5V @ 250μA 5.45nC @ 10V -
TPS1120DR
Texas Instruments
11,639
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 15V 1.17A 8-SOIC
Cut Tape (CT) -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 P-Channel (Dual) 15V 1.17A 180 mOhm @ 1.5A,10V 1.5V @ 250μA 5.45nC @ 10V -
TPS1120DR
Texas Instruments
11,639
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 15V 1.17A 8-SOIC
- -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 P-Channel (Dual) 15V 1.17A 180 mOhm @ 1.5A,10V 1.5V @ 250μA 5.45nC @ 10V -
TPS1120D
Texas Instruments
100
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 15V 1.17A 8-SOIC
Tube -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 P-Channel (Dual) 15V 1.17A 180 mOhm @ 1.5A,10V 1.5V @ 250μA 5.45nC @ 10V -
TPS1120DG4
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 15V 1.17A 8-SOIC
Tube -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 P-Channel (Dual) 15V 1.17A 180 mOhm @ 1.5A,10V 1.5V @ 250μA 5.45nC @ 10V -