Drain to Source Voltage (Vdss):
Discover 46 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
ZXMC3AMCTA
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) N and P-Channel Logic Level Gate 30V 2.9A,2.1A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMC3AMCTA
Diodes Incorporated
4,404
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) N and P-Channel Logic Level Gate 30V 2.9A,2.1A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMC3AMCTA
Diodes Incorporated
4,404
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
- - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) N and P-Channel Logic Level Gate 30V 2.9A,2.1A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMN3AMCTA
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.9A DFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMN3AMCTA
Diodes Incorporated
765
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.9A DFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMN3AMCTA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.9A DFN
- - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 30V 2.9A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMN2AM832TA
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A 8MLP
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-MLP (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 700mV @ 250μA (Min) 3.1nC @ 4.5V 299pF @ 15V
ZXMN2AM832TA
Diodes Incorporated
3,401
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A 8MLP
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-MLP (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 700mV @ 250μA (Min) 3.1nC @ 4.5V 299pF @ 15V
ZXMN2AM832TA
Diodes Incorporated
3,401
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A 8MLP
- - -55°C ~ 150°C (TJ) 8-VDFN Exposed Pad 8-MLP (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 700mV @ 250μA (Min) 3.1nC @ 4.5V 299pF @ 15V
ZXMN2AMCTA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A DFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 3V @ 250μA 3.1nC @ 4.5V 299pF @ 15V
ZXMN2AMCTA
Diodes Incorporated
2,889
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A DFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 3V @ 250μA 3.1nC @ 4.5V 299pF @ 15V
ZXMN2AMCTA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 2.9A DFN
- - -55°C ~ 150°C (TJ) 8-WDFN Exposed Pad 8-DFN (3x2) 2 N-Channel (Dual) Logic Level Gate 20V 2.9A 120 mOhm @ 4A,4.5V 3V @ 250μA 3.1nC @ 4.5V 299pF @ 15V
ZXMC3AM832TA
Diodes Incorporated
573
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
Cut Tape (CT) - - 8-VDFN Exposed Pad 8-MLP (3x3) N and P-Channel Logic Level Gate 30V 2.9A,2.1A 120 mOhm @ 2.5A,10V 1V @ 250μA (Min) 3.9nC @ 10V 190pF @ 25V
ZXMC3AM832TA
Diodes Incorporated
573
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
- - - 8-VDFN Exposed Pad 8-MLP (3x3) N and P-Channel Logic Level Gate 30V 2.9A,2.1A 120 mOhm @ 2.5A,10V 1V @ 250μA (Min) 3.9nC @ 10V 190pF @ 25V
CSD85302LT
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -
CSD85302LT
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -
CSD85302LT
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH
- NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -
CSD85302L
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -
CSD85302L
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -
CSD85302L
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A
- NexFET -55°C ~ 150°C (TJ) 4-XFLGA 4-Picostar (1.31x1.31) 2 N-Channel (Dual) Common Drain Standard - - - - 7.8nC @ 4.5V -