- Manufacturer：
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- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- FET Feature：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 15 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Nexperia USA Inc. |
10,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 0.41A 6DFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 950mV @ 250μA | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
13,918
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 0.41A 6DFN
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 950mV @ 250μA | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
13,918
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 0.41A 6DFN
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- | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 P-Channel (Dual) | Standard | 30V | 410mA | 1.4 Ohm @ 410mA，4.5V | 950mV @ 250μA | 1.2nC @ 4.5V | 43.2pF @ 15V | ||
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Nexperia USA Inc. |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.59A 6DFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 950mV @ 250μA | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
7,362
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.59A 6DFN
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 950mV @ 250μA | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
7,362
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 0.59A 6DFN
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- | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | DFN1010B-6 | 2 N-Channel (Dual) | Standard | 30V | 590mA | 670 mOhm @ 590mA，4.5V | 950mV @ 250μA | 1.05nC @ 4.5V | 30.3pF @ 15V | ||
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Nexperia USA Inc. |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.26A 6DFN
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 260mA | 2.8 Ohm @ 200mA，10V | 2.1V @ 250μA | 1nC @ 10V | 23.6pF @ 10V | ||
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Nexperia USA Inc. |
4,927
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.26A 6DFN
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 260mA | 2.8 Ohm @ 200mA，10V | 2.1V @ 250μA | 1nC @ 10V | 23.6pF @ 10V | ||
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Nexperia USA Inc. |
4,927
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.26A 6DFN
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- | -55°C ~ 150°C (TJ) | 6-XFDFN Exposed Pad | 6-DFN (1.1x1) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 260mA | 2.8 Ohm @ 200mA，10V | 2.1V @ 250μA | 1nC @ 10V | 23.6pF @ 10V | ||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.17A US6
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Tape & Reel (TR) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 170mA | 3.9 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 4.5V | 17pF @ 10V | |||
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Toshiba Semiconductor and Storage |
1,017
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.17A US6
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Cut Tape (CT) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 170mA | 3.9 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 4.5V | 17pF @ 10V | |||
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Toshiba Semiconductor and Storage |
1,017
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.17A US6
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- | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 170mA | 3.9 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.35nC @ 4.5V | 17pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A
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Tape & Reel (TR) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 300mA | 1.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.6nC @ 4.5V | 40pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A
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Cut Tape (CT) | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 300mA | 1.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.6nC @ 4.5V | 40pF @ 10V | |||
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Toshiba Semiconductor and Storage |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.3A
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- | 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | US6 | 2 N-Channel (Dual) | Standard | 60V | 300mA | 1.5 Ohm @ 100mA，10V | 2.1V @ 250μA | 0.6nC @ 4.5V | 40pF @ 10V |
