Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SQ3989EV-T1_GE3
Vishay Siliconix
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Tape & Reel (TR) 2 P-Channel (Dual) 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
Cut Tape (CT) 2 P-Channel (Dual) 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
SQ3989EV-T1_GE3
Vishay Siliconix
4,754
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CH 30V 2.5A 6TSOP
- 2 P-Channel (Dual) 30V 2.5A (Tc) 155 mOhm @ 400mA,10V 1.5V @ 250μA 11.1nC @ 10V -
SQ3987EV-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CHANNEL 30V 3A 6TSOP
Tape & Reel (TR) 2 P-Channel (Dual) 30V 3A (Tc) 133 mOhm @ 1.5A,10V 2.5V @ 250μA 12.2nC @ 10V 570pF @ 15V
SQ3987EV-T1_GE3
Vishay Siliconix
2,977
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CHANNEL 30V 3A 6TSOP
Cut Tape (CT) 2 P-Channel (Dual) 30V 3A (Tc) 133 mOhm @ 1.5A,10V 2.5V @ 250μA 12.2nC @ 10V 570pF @ 15V
SQ3987EV-T1_GE3
Vishay Siliconix
2,977
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 P-CHANNEL 30V 3A 6TSOP
- 2 P-Channel (Dual) 30V 3A (Tc) 133 mOhm @ 1.5A,10V 2.5V @ 250μA 12.2nC @ 10V 570pF @ 15V
SQ3585EV-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6TSOP
Tape & Reel (TR) N and P-Channel 20V 3.57A (Tc),2.5A (Tc) 77 mOhm @ 1A,4.5V,166 mOhm @ 1A,4.5V 1.5V @ 250μA 2.5nC @ 4.5V,3.5nC @ 4.5V -