Operating Temperature:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
PMDPB65UP,115
NXP USA Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.5A SOT1118
Tape & Reel (TR) 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.5A 70 mOhm @ 1A,4.5V 6nC @ 4.5V 380pF @ 10V
PMDPB65UP,115
NXP USA Inc.
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.5A SOT1118
Cut Tape (CT) 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.5A 70 mOhm @ 1A,4.5V 6nC @ 4.5V 380pF @ 10V
PMDPB65UP,115
NXP USA Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.5A SOT1118
- 150°C (TJ) 6-UDFN Exposed Pad DFN2020-6 2 P-Channel (Dual) Logic Level Gate 20V 3.5A 70 mOhm @ 1A,4.5V 6nC @ 4.5V 380pF @ 10V
NTLJD2105LTBG
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 8V 2.5A 6-WDFN
Tape & Reel (TR) -55°C ~ 150°C (TJ) 6-WDFN Exposed Pad 6-WDFN (2x2) N and P-Channel Standard 8V 2.5A 50 mOhm @ 4A,4.5V - -