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- FET Feature：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 11 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
4,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 6.4A，9.7A | 22.6 mOhm @ 6.4A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | 580pF @ 15V | ||
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Infineon Technologies |
6,932
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 6.4A，9.7A | 22.6 mOhm @ 6.4A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | 580pF @ 15V | ||
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Infineon Technologies |
6,932
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 6.4A，9.7A | 22.6 mOhm @ 6.4A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | 580pF @ 15V | ||
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Infineon Technologies |
3,577
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 11nC @ 4.5V | 910pF @ 15V | ||
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Diodes Incorporated |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET ARRAY N-CH 40V 8.6A 8SOIC
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Tape & Reel (TR) | - | -55°C ~ 175°C (TJ) | Standard | 40V | 8.6A (Ta) | 15 mOhm @ 12A，10V | 3V @ 250μA | 33nC @ 10V | 1938pF @ 15V | ||
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Diodes Incorporated |
1,360
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET ARRAY N-CH 40V 8.6A 8SOIC
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Cut Tape (CT) | - | -55°C ~ 175°C (TJ) | Standard | 40V | 8.6A (Ta) | 15 mOhm @ 12A，10V | 3V @ 250μA | 33nC @ 10V | 1938pF @ 15V | ||
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Diodes Incorporated |
1,360
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET ARRAY N-CH 40V 8.6A 8SOIC
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- | - | -55°C ~ 175°C (TJ) | Standard | 40V | 8.6A (Ta) | 15 mOhm @ 12A，10V | 3V @ 250μA | 33nC @ 10V | 1938pF @ 15V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 11nC @ 4.5V | 910pF @ 15V | ||
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Infineon Technologies |
2,452
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 11nC @ 4.5V | 910pF @ 15V | ||
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Infineon Technologies |
2,452
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 7.6A/11A 8-SOIC
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- | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 7.6A，11A | 16.2 mOhm @ 7.6A，10V | 2.25V @ 25μA | 11nC @ 4.5V | 910pF @ 15V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
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Tube | HEXFET | -55°C ~ 150°C (TJ) | Logic Level Gate | 30V | 6.4A，9.7A | 22.6 mOhm @ 6.4A，10V | 2.25V @ 25μA | 6.9nC @ 4.5V | 580pF @ 15V |
