Supplier Device Package:
FET Feature:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SI4590DY-T1-GE3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
Tape & Reel (TR) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel - 100V 3.4A,2.8A 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V
SI4590DY-T1-GE3
Vishay Siliconix
755
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
Cut Tape (CT) TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel - 100V 3.4A,2.8A 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V
SI4590DY-T1-GE3
Vishay Siliconix
755
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P CHAN 100V SO8 DUAL
- TrenchFET 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel - 100V 3.4A,2.8A 57 mOhm @ 2A,10V 2.5V @ 250μA 11.5nC @ 10V 360pF @ 50V
IRFH7911TRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 13A/28A PQFN
Tape & Reel (TR) HEXFET 18-PowerVQFN PQFN (5x6) 2 N-Channel (Dual) Logic Level Gate 30V 13A,28A 8.6 mOhm @ 12A,10V 2.35V @ 25μA 12nC @ 4.5V 1060pF @ 15V
IRFH7911TR2PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 13A/28A PQFN
Cut Tape (CT) HEXFET 18-PowerVQFN PQFN (5x6) 2 N-Channel (Dual) Logic Level Gate 30V 13A,28A 8.6 mOhm @ 12A,10V 2.35V @ 25μA 12nC @ 4.5V 1060pF @ 15V
IRFH7911TR2PBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 13A/28A PQFN
- HEXFET 18-PowerVQFN PQFN (5x6) 2 N-Channel (Dual) Logic Level Gate 30V 13A,28A 8.6 mOhm @ 12A,10V 2.35V @ 25μA 12nC @ 4.5V 1060pF @ 15V