Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 3 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
AUIRFN8458TR
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 40V 43A 8PQFN
Tape & Reel (TR) HEXFET -55°C ~ 175°C (TJ) 8-PowerTDFN PQFN (5x6) 40V 43A (Tc) 10 mOhm @ 26A,10V 3.9V @ 25μA 33nC @ 10V 1060pF @ 25V
SQJ980AEP-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 75V POWERPAK SO8
Tape & Reel (TR) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TA) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 75V 17A (Tc) 50 mOhm @ 3.8A,10V 2.5V @ 250μA 21nC @ 10V 790pF @ 35V
SQJ980AEP-T1_GE3
Vishay Siliconix
2,772
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 75V POWERPAK SO8
Cut Tape (CT) Automotive,AEC-Q101,TrenchFET -55°C ~ 175°C (TA) PowerPAK? SO-8 Dual PowerPAK? SO-8 Dual 75V 17A (Tc) 50 mOhm @ 3.8A,10V 2.5V @ 250μA 21nC @ 10V 790pF @ 35V