Series:
Operating Temperature:
Package / Case:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 4 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Series Operating Temperature Package / Case Supplier Device Package FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
CAS100H12AM1
Cree/Wolfspeed
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 168A MODULE
Z-FET - Module Module 2 N-Channel (Half Bridge) 1200V (1.2kV) 168A 20 mOhm @ 20A,20V 3.1V @ 50mA - 9500pF @ 800V
APTC80AM75SCG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 800V 56A SP6
- -40°C ~ 150°C (TJ) SP6 SP6 2 N-Channel (Half Bridge) 800V 56A 75 mOhm @ 28A,10V 3.9V @ 4mA 364nC @ 10V 9015pF @ 25V
APTML602U12R020T3AG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 600V 45A SP3
- -40°C ~ 150°C (TJ) SP3 SP3 2 N-Channel (Dual) 600V 45A 150 mOhm @ 22.5A,10V 4V @ 2.5mA - 7600pF @ 25V
APTML502UM90R020T3AG
Microsemi Corporation
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 52A SP3
- -40°C ~ 150°C (TJ) SP3 SP3 2 N-Channel (Dual) 500V 52A 108 mOhm @ 26A,10V 4V @ 2.5mA - 7600pF @ 25V