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- Supplier Device Package:
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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Selected conditions:
Discover 2 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Transphorm |
79
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3 days |
-
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MOQ: 1 MPQ: 1
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CASCODE GAN HB 600V 70A MODULE
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-40°C ~ 150°C (TJ) | Module | Module | Through Hole | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 600V | 70A (Tc) | 34 mOhm @ 30A,8V | - | 28nC @ 8V | 2260pF @ 100V | ||||
Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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POWER MODULE - SIC
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-40°C ~ 175°C (TJ) | SP1 | SP1 | Chassis Mount | 2 N-Channel (Dual),Schottky | Silicon Carbide (SiC) | 1200V (1.2kV) | 74A (Tc) | 50 mOhm @ 40A,20V | 3V @ 2mA | 272nC @ 20V | 5120pF @ 1000V |