Package / Case:
Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id,Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 2 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Operating Temperature Package / Case Supplier Device Package Mounting Type FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
TPD3215M
Transphorm
79
3 days
-
MOQ: 1  MPQ: 1
CASCODE GAN HB 600V 70A MODULE
-40°C ~ 150°C (TJ) Module Module Through Hole 2 N-Channel (Half Bridge) GaNFET (Gallium Nitride) 600V 70A (Tc) 34 mOhm @ 30A,8V - 28nC @ 8V 2260pF @ 100V
APTSM120AM55CT1AG
Microsemi Corporation
Inquiry
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-
MOQ: 1  MPQ: 1
POWER MODULE - SIC
-40°C ~ 175°C (TJ) SP1 SP1 Chassis Mount 2 N-Channel (Dual),Schottky Silicon Carbide (SiC) 1200V (1.2kV) 74A (Tc) 50 mOhm @ 40A,20V 3V @ 2mA 272nC @ 20V 5120pF @ 1000V