- Series：
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- FET Type：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Rds On (Max) @ Id，Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 13 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
20
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 90A SP4
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- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 90A SP4
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POWER MOS 7 | SP4 | SP4 | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 1000V 36A SP4
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- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1000V (1kV) | 36A | 270 mOhm @ 18A，10V | 308nC @ 10V | 8700pF @ 25V | ||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 200V 175A SP6
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- | SP6 | SP6 | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 175A | 12 mOhm @ 87.5A，10V | 224nC @ 10V | 13700pF @ 25V | ||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 500V 90A SP4
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- | SP4 | SP4 | 2 N-Channel (Dual) | Standard | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | ||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 200V 175A SP4
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- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Standard | 200V | 175A | 12 mOhm @ 87.5A，10V | 224nC @ 10V | 13700pF @ 25V | |||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 200V 175A SP4
|
- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Standard | 200V | 175A | 12 mOhm @ 87.5A，10V | 224nC @ 10V | 13700pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1000V 36A SP4
|
- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 36A | 270 mOhm @ 18A，10V | 308nC @ 10V | 8700pF @ 25V | |||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 90A SP6
|
- | SP6 | SP6 | 2 N-Channel (Dual) Asymmetrical | Standard | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | |||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 500V 90A SP4
|
- | SP4 | SP4 | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | |||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 200V 175A SP6
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- | SP6 | SP6 | 4 N-Channel (H-Bridge) | Standard | 200V | 175A | 12 mOhm @ 87.5A，10V | 224nC @ 10V | 13700pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 500V 90A SP6
|
- | SP6 | SP6 | 4 N-Channel (H-Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A，10V | 246nC @ 10V | 11200pF @ 25V | |||
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Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 200V 175A SP4
|
- | SP4 | SP4 | 2 N-Channel (Dual) | Standard | 200V | 175A | 12 mOhm @ 87.5A，10V | 224nC @ 10V | 13700pF @ 25V |
