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- Rds On (Max) @ Id，Vgs：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 2 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Package / Case | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
22
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 1200V 78A SP6-P
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- | SP6 | SP6-P | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 78A | 33 mOhm @ 60A，20V | 2.2V @ 3mA (Typ) | 148nC @ 20V | 2850pF @ 1000V | |||
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IXYS |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 200V 84A Y4
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HiPerFET | Y4 | Y4 | 2 N-Channel (Dual) | 200V | 84A | 25 mOhm @ 500mA，10V | 4V @ 8mA | 450nC @ 10V | 15000pF @ 25V |
