Discover 9 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
SQJ946EP-T1_GE3
Vishay Siliconix
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 40V POWERPAK SO8
Tape & Reel (TR) 2 N-Channel (Dual) 40V 15A (Tc) 33 mOhm @ 7A,10V 20nC @ 10V 600pF @ 25V
SQJ946EP-T1_GE3
Vishay Siliconix
2,195
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 40V POWERPAK SO8
Cut Tape (CT) 2 N-Channel (Dual) 40V 15A (Tc) 33 mOhm @ 7A,10V 20nC @ 10V 600pF @ 25V
SQJ946EP-T1_GE3
Vishay Siliconix
2,195
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 40V POWERPAK SO8
- 2 N-Channel (Dual) 40V 15A (Tc) 33 mOhm @ 7A,10V 20nC @ 10V 600pF @ 25V
SQJB68EP-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 100V POWERPAK SO8
Tape & Reel (TR) 2 N-Channel (Dual) 100V 11A (Tc) 92 mOhm @ 4A,10V 8nC @ 10V 280pF @ 25V
SQJB68EP-T1_GE3
Vishay Siliconix
2,963
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 100V POWERPAK SO8
Cut Tape (CT) 2 N-Channel (Dual) 100V 11A (Tc) 92 mOhm @ 4A,10V 8nC @ 10V 280pF @ 25V
SQJB68EP-T1_GE3
Vishay Siliconix
2,963
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 100V POWERPAK SO8
- 2 N-Channel (Dual) 100V 11A (Tc) 92 mOhm @ 4A,10V 8nC @ 10V 280pF @ 25V
SQJ570EP-T1_GE3
Vishay Siliconix
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 100V POWERPAK SO8
Tape & Reel (TR) N and P-Channel 100V 15A (Tc),9.5A (Tc) 45 mOhm @ 6A,10V,146 mOhm @ 6A,10V 20nC @ 10V,15nC @ 10V 650pF @ 25V,600pF @ 25V
SQJ570EP-T1_GE3
Vishay Siliconix
2,300
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 100V POWERPAK SO8
Cut Tape (CT) N and P-Channel 100V 15A (Tc),9.5A (Tc) 45 mOhm @ 6A,10V,146 mOhm @ 6A,10V 20nC @ 10V,15nC @ 10V 650pF @ 25V,600pF @ 25V
SQJ570EP-T1_GE3
Vishay Siliconix
2,300
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 100V POWERPAK SO8
- N and P-Channel 100V 15A (Tc),9.5A (Tc) 45 mOhm @ 6A,10V,146 mOhm @ 6A,10V 20nC @ 10V,15nC @ 10V 650pF @ 25V,600pF @ 25V