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- Selected conditions:
Discover 6 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Tape & Reel (TR) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 2 N-Channel (Dual) | Logic Level Gate | 40V | 8.2 mOhm @ 17A，10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||
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Infineon Technologies |
8,898
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Cut Tape (CT) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 2 N-Channel (Dual) | Logic Level Gate | 40V | 8.2 mOhm @ 17A，10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||
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Infineon Technologies |
8,898
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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- | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 2 N-Channel (Dual) | Logic Level Gate | 40V | 8.2 mOhm @ 17A，10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 8TDSON
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Tape & Reel (TR) | Automotive，AEC-Q101，OptiMOS | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 2 N-Channel (Dual) | Logic Level Gate | 40V | 8.2 mOhm @ 17A，10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||
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Renesas Electronics America |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 3N/3P-CH 60V 20A HSOP
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Tray | Automotive，AEC-Q101 | 175°C | 20-SOIC (0.433"，11.00mm Width) Exposed Pad | 20-HSOP | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate，4.5V Drive | 60V | 20 mOhm @ 10A，10V | 2.5V @ 1mA | 43nC @ 10V | 2600pF @ 10V | ||
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Renesas Electronics America |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 3N/3P-CH 60V 20A HSOP
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- | Automotive，AEC-Q101 | 175°C | 20-SOIC (0.433"，11.00mm Width) Exposed Pad | 20-HSOP | 3 N and 3 P-Channel (3-Phase Bridge) | Logic Level Gate，4.5V Drive | 60V | 20 mOhm @ 10A，10V | 2.5V @ 1mA | 43nC @ 10V | 2600pF @ 10V |
