Drain to Source Voltage (Vdss):
Discover 54 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
CSD88539ND
Texas Instruments
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 N-Channel (Dual) Standard 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
CSD88539ND
Texas Instruments
6,772
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 N-Channel (Dual) Standard 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
CSD88539ND
Texas Instruments
6,772
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
- NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 N-Channel (Dual) Standard 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
CSD88539NDT
Texas Instruments
1,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
CSD88539NDT
Texas Instruments
1,752
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
CSD88539NDT
Texas Instruments
1,752
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
- NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Logic Level Gate 60V 15A 28 mOhm @ 5A,10V 3.6V @ 250μA 9.4nC @ 10V 741pF @ 30V
DMHC10H170SFJ-13
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V DFN5045-12
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 12-VDFN Exposed Pad V-DFN5045-12 2 N and 2 P-Channel (H-Bridge) Standard 100V 2.9A,2.3A 160 mOhm @ 5A,10V 3V @ 250μA 9.7nC @ 10V 1167pF @ 25V
DMHC10H170SFJ-13
Diodes Incorporated
3,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V DFN5045-12
Cut Tape (CT) - -55°C ~ 150°C (TJ) 12-VDFN Exposed Pad V-DFN5045-12 2 N and 2 P-Channel (H-Bridge) Standard 100V 2.9A,2.3A 160 mOhm @ 5A,10V 3V @ 250μA 9.7nC @ 10V 1167pF @ 25V
DMHC10H170SFJ-13
Diodes Incorporated
3,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V DFN5045-12
- - -55°C ~ 150°C (TJ) 12-VDFN Exposed Pad V-DFN5045-12 2 N and 2 P-Channel (H-Bridge) Standard 100V 2.9A,2.3A 160 mOhm @ 5A,10V 3V @ 250μA 9.7nC @ 10V 1167pF @ 25V
ZXMC4559DN8TC
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 60V 3.6A,2.6A 55 mOhm @ 4.5A,10V 1V @ 250μA (Min) 20.4nC @ 10V 1063pF @ 30V
ZXMC4559DN8TC
Diodes Incorporated
3,065
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Cut Tape (CT) - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 60V 3.6A,2.6A 55 mOhm @ 4.5A,10V 1V @ 250μA (Min) 20.4nC @ 10V 1063pF @ 30V
ZXMC4559DN8TC
Diodes Incorporated
3,065
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V 3.6A/2.6A 8SO
- - -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO N and P-Channel Logic Level Gate 60V 3.6A,2.6A 55 mOhm @ 4.5A,10V 1V @ 250μA (Min) 20.4nC @ 10V 1063pF @ 30V
DMNH6042SSDQ-13
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2 N-CH 60V 16.7A 8SO
Tape & Reel (TR) Automotive,AEC-Q101 -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Standard 60V 16.7A (Tc) 50 mOhm @ 5.1A,10V 3V @ 250μA 4.2nC @ 4.5V 584pF @ 25V
DMNH6042SSDQ-13
Diodes Incorporated
2,304
3 days
-
MOQ: 1  MPQ: 1
MOSFET BVDSS: 41V 60V SO-8 T&R 2
Cut Tape (CT) Automotive,AEC-Q101 -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Standard 60V 16.7A (Tc) 50 mOhm @ 5.1A,10V 3V @ 250μA 4.2nC @ 4.5V 584pF @ 25V
DMNH6042SSDQ-13
Diodes Incorporated
2,304
3 days
-
MOQ: 1  MPQ: 1
MOSFET BVDSS: 41V 60V SO-8 T&R 2
- Automotive,AEC-Q101 -55°C ~ 175°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SO 2 N-Channel (Dual) Standard 60V 16.7A (Tc) 50 mOhm @ 5.1A,10V 3V @ 250μA 4.2nC @ 4.5V 584pF @ 25V
FDMD8900
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V POWER
Tape & Reel (TR) - -55°C ~ 150°C (TJ) 12-PowerWDFN 12-Power3.3x5 2 N-Channel (Dual) Standard 30V 19A,17A 4 mOhm @ 19A,10V 2.5V @ 250μA 35nC @ 10V 2605pF @ 15V
FDMD8900
ON Semiconductor
2,820
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V POWER
Cut Tape (CT) - -55°C ~ 150°C (TJ) 12-PowerWDFN 12-Power3.3x5 2 N-Channel (Dual) Standard 30V 19A,17A 4 mOhm @ 19A,10V 2.5V @ 250μA 35nC @ 10V 2605pF @ 15V
FDMD8900
ON Semiconductor
2,820
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V POWER
- - -55°C ~ 150°C (TJ) 12-PowerWDFN 12-Power3.3x5 2 N-Channel (Dual) Standard 30V 19A,17A 4 mOhm @ 19A,10V 2.5V @ 250μA 35nC @ 10V 2605pF @ 15V
CSD88537ND
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Tape & Reel (TR) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 N-Channel (Dual) Standard 60V 15A 15 mOhm @ 8A,10V 3.6V @ 250μA 18nC @ 10V 1400pF @ 30V
CSD88537ND
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 15A 8SOIC
Cut Tape (CT) NexFET -55°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC 2 N-Channel (Dual) Standard 60V 15A 15 mOhm @ 8A,10V 3.6V @ 250μA 18nC @ 10V 1400pF @ 30V