Drain to Source Voltage (Vdss):
Discover 134 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMC2004DWK-7
Diodes Incorporated
63,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
Tape & Reel (TR) - -65°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 N and P-Channel Logic Level Gate 20V 540mA,430mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
DMC2004DWK-7
Diodes Incorporated
65,396
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
Cut Tape (CT) - -65°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 N and P-Channel Logic Level Gate 20V 540mA,430mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
DMC2004DWK-7
Diodes Incorporated
65,396
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V SOT-363
- - -65°C ~ 150°C (TJ) 6-TSSOP,SC-88,SOT-363 SOT-363 N and P-Channel Logic Level Gate 20V 540mA,430mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
SI1026X-T1-GE3
Vishay Siliconix
108,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 N-Channel (Dual) Logic Level Gate 60V 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1026X-T1-GE3
Vishay Siliconix
110,511
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 N-Channel (Dual) Logic Level Gate 60V 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1026X-T1-GE3
Vishay Siliconix
110,511
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.305A SC89-6
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 N-Channel (Dual) Logic Level Gate 60V 305mA 1.4 Ohm @ 500mA,10V 2.5V @ 250μA 0.6nC @ 4.5V 30pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
15,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 P-Channel (Dual) Logic Level Gate 60V 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
17,865
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 P-Channel (Dual) Logic Level Gate 60V 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
SI1025X-T1-GE3
Vishay Siliconix
17,865
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 60V 0.19A SC-89
- TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 P-Channel (Dual) Logic Level Gate 60V 190mA 4 Ohm @ 500mA,10V 3V @ 250μA 1.7nC @ 15V 23pF @ 25V
BSD223PH6327XTSA1
Infineon Technologies
93,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.39A SOT363
Tape & Reel (TR) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 2 P-Channel (Dual) Logic Level Gate 20V 390mA 1.2 Ohm @ 390mA,4.5V 1.2V @ 1.5μA 0.62nC @ 4.5V 56pF @ 15V
BSD223PH6327XTSA1
Infineon Technologies
93,437
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.39A SOT363
Cut Tape (CT) OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 2 P-Channel (Dual) Logic Level Gate 20V 390mA 1.2 Ohm @ 390mA,4.5V 1.2V @ 1.5μA 0.62nC @ 4.5V 56pF @ 15V
BSD223PH6327XTSA1
Infineon Technologies
93,437
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.39A SOT363
- OptiMOS -55°C ~ 150°C (TJ) 6-VSSOP,SC-88,SOT-363 PG-SOT363-6 2 P-Channel (Dual) Logic Level Gate 20V 390mA 1.2 Ohm @ 390mA,4.5V 1.2V @ 1.5μA 0.62nC @ 4.5V 56pF @ 15V
2N7002V
ON Semiconductor
60,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.28A SOT-563F
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563F 2 N-Channel (Dual) Logic Level Gate 60V 280mA 7.5 Ohm @ 50mA,5V 2.5V @ 250μA - 50pF @ 25V
2N7002V
ON Semiconductor
60,253
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.28A SOT-563F
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563F 2 N-Channel (Dual) Logic Level Gate 60V 280mA 7.5 Ohm @ 50mA,5V 2.5V @ 250μA - 50pF @ 25V
2N7002V
ON Semiconductor
60,253
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 0.28A SOT-563F
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563F 2 N-Channel (Dual) Logic Level Gate 60V 280mA 7.5 Ohm @ 50mA,5V 2.5V @ 250μA - 50pF @ 25V
DMN2004VK-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.54A SOT-563
Tape & Reel (TR) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
DMN2004VK-7
Diodes Incorporated
8,083
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.54A SOT-563
Cut Tape (CT) - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
DMN2004VK-7
Diodes Incorporated
8,083
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 0.54A SOT-563
- - -55°C ~ 150°C (TJ) SOT-563,SOT-666 SOT-563 2 N-Channel (Dual) Logic Level Gate 20V 540mA 550 mOhm @ 540mA,4.5V 1V @ 250μA - 150pF @ 16V
SI1023X-T1-GE3
Vishay Siliconix
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SC89-6
Tape & Reel (TR) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 P-Channel (Dual) Logic Level Gate 20V 370mA 1.2 Ohm @ 350mA,4.5V 450mV @ 250μA (Min) 1.5nC @ 4.5V -
SI1023X-T1-GE3
Vishay Siliconix
11,369
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 0.37A SC89-6
Cut Tape (CT) TrenchFET -55°C ~ 150°C (TJ) SOT-563,SOT-666 SC-89-6 2 P-Channel (Dual) Logic Level Gate 20V 370mA 1.2 Ohm @ 350mA,4.5V 450mV @ 250μA (Min) 1.5nC @ 4.5V -