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- Supplier Device Package：
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- FET Type：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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Discover 41 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 60V 4.5A 8SOP
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2 N-Channel (Dual) | Standard | 60V | 4.5A (Ta) | 55 mOhm @ 4.5A，10V | 3V @ 250μA | 18nC @ 10V | 910pF @ 24V | ||
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 60V 4.5A 8SOP
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2 N-Channel (Dual) | Standard | 60V | 4.5A (Ta) | 55 mOhm @ 4.5A，10V | 3V @ 250μA | 18nC @ 10V | 910pF @ 24V | ||
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Taiwan Semiconductor Corporation |
5,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 60V 4.5A 8SOP
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- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOP | 2 N-Channel (Dual) | Standard | 60V | 4.5A (Ta) | 55 mOhm @ 4.5A，10V | 3V @ 250μA | 18nC @ 10V | 910pF @ 24V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
3,310
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
3,310
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8SOIC
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- | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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Tape & Reel (TR) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A，10V | 3V @ 250μA | 33nC @ 10V | 755pF @ 25V | ||
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Infineon Technologies |
3,944
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A，10V | 3V @ 250μA | - | 755pF @ 25V | ||
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Infineon Technologies |
3,944
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6.5A 8SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.9A | 29 mOhm @ 6.9A，10V | 3V @ 250μA | - | 755pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 5.1A 8SOIC
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Tape & Reel (TR) | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 3V @ 250μA | 44nC @ 10V | 780pF @ 25V | ||
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Infineon Technologies |
1,057
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 5.1A 8SOIC
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Cut Tape (CT) | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 3V @ 250μA | 44nC @ 10V | 780pF @ 25V | ||
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Infineon Technologies |
1,057
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 5.1A 8SOIC
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- | Automotive，AEC-Q101，HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 3V @ 250μA | 44nC @ 10V | 780pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 55V 5.1A
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Tape & Reel (TR) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 1V @ 250μA (Min) | 44nC @ 10V | 780pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8-SOIC
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Tube | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 50V 3A 8-SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Standard | 50V | 3A | 130 mOhm @ 3A，10V | 3V @ 250μA | 15nC @ 10V | 255pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 5.2A 8SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 58 mOhm @ 5.2A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 913pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 5.2A 8SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 20V | 5.2A | 58 mOhm @ 5.2A，4.5V | 700mV @ 250μA | 29nC @ 4.5V | 913pF @ 15V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 5.1A 8-SOIC
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Cut Tape (CT) | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 1V @ 250μA | 44nC @ 10V | 780pF @ 25V | ||
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Infineon Technologies |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 55V 5.1A 8-SOIC
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- | HEXFET | -55°C ~ 175°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A，10V | 1V @ 250μA | 44nC @ 10V | 780pF @ 25V |
