FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Package / Case：

Supplier Device Package：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Package / Case	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMC2038LVT-7	Diodes Incorporated	132,000	3 days	-	MOSFET N/P-CH 20V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V TSOT26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	N and P-Channel	Logic Level Gate	20V	3.7A，2.6A	35 mOhm @ 4A，4.5V	1V @ 250μA	17nC @ 10V	530pF @ 10V
	DMC2038LVT-7	Diodes Incorporated	134,544	3 days	-	MOSFET N/P-CH 20V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V TSOT26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	N and P-Channel	Logic Level Gate	20V	3.7A，2.6A	35 mOhm @ 4A，4.5V	1V @ 250μA	17nC @ 10V	530pF @ 10V
	DMC2038LVT-7	Diodes Incorporated	134,544	3 days	-	MOSFET N/P-CH 20V TSOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V TSOT26	-	-	-55°C ~ 150°C (TJ)	SOT-23-6 Thin，TSOT-23-6	TSOT-26	N and P-Channel	Logic Level Gate	20V	3.7A，2.6A	35 mOhm @ 4A，4.5V	1V @ 250μA	17nC @ 10V	530pF @ 10V
	FDMB2308PZ	ON Semiconductor	3,000	3 days	-	MOSFET 2P-CH MLP2X3 MOQ: 1 MPQ: 1	MOSFET 2P-CH MLP2X3	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 P-Channel (Dual) Common Drain	Logic Level Gate	-	-	36 mOhm @ 5.7A，4.5V	1.5V @ 250μA	30nC @ 10V	3030pF @ 10V
	FDMB2308PZ	ON Semiconductor	5,975	3 days	-	MOSFET 2P-CH MLP2X3 MOQ: 1 MPQ: 1	MOSFET 2P-CH MLP2X3	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 P-Channel (Dual) Common Drain	Logic Level Gate	-	-	36 mOhm @ 5.7A，4.5V	1.5V @ 250μA	30nC @ 10V	3030pF @ 10V
	FDMB2308PZ	ON Semiconductor	5,975	3 days	-	MOSFET 2P-CH MLP2X3 MOQ: 1 MPQ: 1	MOSFET 2P-CH MLP2X3	-	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 P-Channel (Dual) Common Drain	Logic Level Gate	-	-	36 mOhm @ 5.7A，4.5V	1.5V @ 250μA	30nC @ 10V	3030pF @ 10V
	FDMB3900AN	ON Semiconductor	6,000	3 days	-	MOSFET 2N-CH 25V 7A 8-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 25V 7A 8-MLP	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP，MicroFET (3x1.9)	2 N-Channel (Dual)	Logic Level Gate	25V	7A	23 mOhm @ 7A，10V	3V @ 250μA	17nC @ 10V	890pF @ 13V
	FDMB3900AN	ON Semiconductor	8,986	3 days	-	MOSFET 2N-CH 25V 7A 8-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 25V 7A 8-MLP	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP，MicroFET (3x1.9)	2 N-Channel (Dual)	Logic Level Gate	25V	7A	23 mOhm @ 7A，10V	3V @ 250μA	17nC @ 10V	890pF @ 13V
	FDMB3900AN	ON Semiconductor	8,986	3 days	-	MOSFET 2N-CH 25V 7A 8-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 25V 7A 8-MLP	-	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-MLP，MicroFET (3x1.9)	2 N-Channel (Dual)	Logic Level Gate	25V	7A	23 mOhm @ 7A，10V	3V @ 250μA	17nC @ 10V	890pF @ 13V
	FDMB2307NZ	ON Semiconductor	6,000	3 days	-	MOSFET 2N-CH 6-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 6-MLP	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 N-Channel (Dual) Common Drain	Logic Level Gate	-	-	-	-	28nC @ 5V	-
	FDMB2307NZ	ON Semiconductor	9,915	3 days	-	MOSFET 2N-CH 6-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 6-MLP	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 N-Channel (Dual) Common Drain	Logic Level Gate	-	-	-	-	28nC @ 5V	-
	FDMB2307NZ	ON Semiconductor	9,915	3 days	-	MOSFET 2N-CH 6-MLP MOQ: 1 MPQ: 1	MOSFET 2N-CH 6-MLP	-	PowerTrench	-55°C ~ 150°C (TJ)	6-WDFN Exposed Pad	6-MLP (2x3)	2 N-Channel (Dual) Common Drain	Logic Level Gate	-	-	-	-	28nC @ 5V	-
	FDMC7208S	ON Semiconductor	3,000	3 days	-	MOSFET 2N-CH 30V 12A/16A PWR33 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 12A/16A PWR33	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	2 N-Channel (Dual)	Logic Level Gate	30V	12A，16A	9 mOhm @ 12A，10V	3V @ 250μA	18nC @ 10V	1130pF @ 15V
	FDMC7208S	ON Semiconductor	4,875	3 days	-	MOSFET 2N-CH 30V 12A/16A PWR33 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 12A/16A PWR33	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	2 N-Channel (Dual)	Logic Level Gate	30V	12A，16A	9 mOhm @ 12A，10V	3V @ 250μA	18nC @ 10V	1130pF @ 15V
	FDMC7208S	ON Semiconductor	4,875	3 days	-	MOSFET 2N-CH 30V 12A/16A PWR33 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 12A/16A PWR33	-	PowerTrench	-55°C ~ 150°C (TJ)	8-PowerWDFN	8-Power33 (3x3)	2 N-Channel (Dual)	Logic Level Gate	30V	12A，16A	9 mOhm @ 12A，10V	3V @ 250μA	18nC @ 10V	1130pF @ 15V
	DMN2014LHAB-7	Diodes Incorporated	3,000	3 days	-	MOSFET 2N-CH 20V 9A 6-UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 9A 6-UDFN	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)	2 N-Channel (Dual)	Logic Level Gate	20V	9A	13 mOhm @ 4A，4.5V	1.1V @ 250μA	16nC @ 4.5V	1550pF @ 10V
	DMN2014LHAB-7	Diodes Incorporated	5,500	3 days	-	MOSFET 2N-CH 20V 9A 6-UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 9A 6-UDFN	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)	2 N-Channel (Dual)	Logic Level Gate	20V	9A	13 mOhm @ 4A，4.5V	1.1V @ 250μA	16nC @ 4.5V	1550pF @ 10V
	DMN2014LHAB-7	Diodes Incorporated	5,500	3 days	-	MOSFET 2N-CH 20V 9A 6-UDFN MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 9A 6-UDFN	-	-	-55°C ~ 150°C (TJ)	6-UFDFN Exposed Pad	U-DFN2030-6 (Type B)	2 N-Channel (Dual)	Logic Level Gate	20V	9A	13 mOhm @ 4A，4.5V	1.1V @ 250μA	16nC @ 4.5V	1550pF @ 10V
	FDMA1027P	ON Semiconductor	Inquiry	-	-	MOSFET 2P-CH 20V 3A MICROFET MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 3A MICROFET	Tape & Reel (TR)	PowerTrench	-55°C ~ 150°C (TJ)	6-VDFN Exposed Pad	6-MicroFET (2x2)	2 P-Channel (Dual)	Logic Level Gate	20V	3A	120 mOhm @ 3A，4.5V	1.3V @ 250μA	6nC @ 4.5V	435pF @ 10V
	FDMA1027P	ON Semiconductor	1,244	3 days	-	MOSFET 2P-CH 20V 3A MICROFET MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 3A MICROFET	Cut Tape (CT)	PowerTrench	-55°C ~ 150°C (TJ)	6-VDFN Exposed Pad	6-MicroFET (2x2)	2 P-Channel (Dual)	Logic Level Gate	20V	3A	120 mOhm @ 3A，4.5V	1.3V @ 250μA	6nC @ 4.5V	435pF @ 10V

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