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Discover 139 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
9,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 0.22A SSOT6
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 0.7nC @ 4.5V | 9.5pF @ 10V | ||
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ON Semiconductor |
14,182
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 25V 0.22A SSOT6
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 0.7nC @ 4.5V | 9.5pF @ 10V | ||
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ON Semiconductor |
14,182
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 25V 0.22A SSOT6
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- | - | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Logic Level Gate | 25V | 220mA | 4 Ohm @ 400mA，4.5V | 1.5V @ 250μA | 0.7nC @ 4.5V | 9.5pF @ 10V | ||
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ON Semiconductor |
24,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 3A SSOT-6
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
24,030
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 3A SSOT-6
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
24,030
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 3A SSOT-6
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- | PowerTrench | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
18,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.9A MICROFET6
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
111,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V MICROFET 2X2
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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ON Semiconductor |
114,544
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V MICROFET 2X2
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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ON Semiconductor |
114,544
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V MICROFET 2X2
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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ON Semiconductor |
9,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.7A MICROFET
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.7A | 72 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 12nC @ 4.5V | 655pF @ 10V | ||
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ON Semiconductor |
10,668
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 3.7A MICROFET
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.7A | 72 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 12nC @ 4.5V | 655pF @ 10V | ||
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ON Semiconductor |
10,668
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.7A MICROFET
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.7A | 72 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 12nC @ 4.5V | 655pF @ 10V | ||
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ON Semiconductor |
6,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 5A 6-MICROFET
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Tape & Reel (TR) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 54 mOhm @ 5A，4.5V | 1V @ 250μA | 7.3nC @ 4.5V | 500pF @ 10V | ||
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ON Semiconductor |
8,421
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 5A 6-MICROFET
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Cut Tape (CT) | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 54 mOhm @ 5A，4.5V | 1V @ 250μA | 7.3nC @ 4.5V | 500pF @ 10V | ||
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ON Semiconductor |
8,421
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 5A 6-MICROFET
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- | PowerTrench | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 5A | 54 mOhm @ 5A，4.5V | 1V @ 250μA | 7.3nC @ 4.5V | 500pF @ 10V | ||
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Diodes Incorporated |
18,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.51A SOT26
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Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 510mA | 2.4 Ohm @ 200mA，10V | 2.5V @ 1mA | 304nC @ 4.5V | 50pF @ 25V | ||
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Diodes Incorporated |
20,247
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 60V 0.51A SOT26
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Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | SOT-23-6 | SOT-26 | 2 N-Channel (Dual) | Logic Level Gate | 60V | 510mA | 2.4 Ohm @ 200mA，10V | 2.5V @ 1mA | 304nC @ 4.5V | 50pF @ 25V |
