- Manufacturer：
-
- Packaging：
-
- Series：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- FET Type：
-
- FET Feature：
-
- Drain to Source Voltage (Vdss)：
-
- Current - Continuous Drain (Id) @ 25°C：
-
- Rds On (Max) @ Id，Vgs：
-
- Vgs(th) (Max) @ Id：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Selected conditions:
Discover 167 products
 |
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|
|
|
Diodes Incorporated |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 30V 8SO
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 30V | 6A，4.2A | 25 mOhm @ 5A，10V | 2V @ 250μA | 11.7nC @ 10V | 590pF @ 15V | ||
|
|
|
Diodes Incorporated |
15,961
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 30V 8SO
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 30V | 6A，4.2A | 25 mOhm @ 5A，10V | 2V @ 250μA | 11.7nC @ 10V | 590pF @ 15V | ||
|
|
|
Diodes Incorporated |
15,961
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 30V 8SO
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 30V | 6A，4.2A | 25 mOhm @ 5A，10V | 2V @ 250μA | 11.7nC @ 10V | 590pF @ 15V | ||
|
|
|
Vishay Siliconix |
15,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 3.2A PPAK SO-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64 mOhm @ 5A，10V | 3V @ 250μA | 40nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
16,938
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 3.2A PPAK SO-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64 mOhm @ 5A，10V | 3V @ 250μA | 40nC @ 10V | - | ||
|
|
|
Vishay Siliconix |
16,938
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 60V 3.2A PPAK SO-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | PowerPAK? SO-8 Dual | PowerPAK? SO-8 Dual | 2 P-Channel (Dual) | Logic Level Gate | 60V | 3.2A | 64 mOhm @ 5A，10V | 3V @ 250μA | 40nC @ 10V | - | ||
|
|
|
Alpha & Omega Semiconductor Inc. |
10,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 9A/18.5A 8DFN
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-PowerSMD，Flat Leads | 8-DFN (3x3) | N and P-Channel，Common Drain | Logic Level Gate | 30V | 9A，18.5A | 50 mOhm @ 4A，10V | 2.5V @ 250μA | 10nC @ 10V | 170pF @ 15V | ||
|
|
|
Alpha & Omega Semiconductor Inc. |
10,425
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 9A/18.5A 8DFN
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-PowerSMD，Flat Leads | 8-DFN (3x3) | N and P-Channel，Common Drain | Logic Level Gate | 30V | 9A，18.5A | 50 mOhm @ 4A，10V | 2.5V @ 250μA | 10nC @ 10V | 170pF @ 15V | ||
|
|
|
Alpha & Omega Semiconductor Inc. |
10,425
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 9A/18.5A 8DFN
|
- | - | -55°C ~ 150°C (TJ) | 8-PowerSMD，Flat Leads | 8-DFN (3x3) | N and P-Channel，Common Drain | Logic Level Gate | 30V | 9A，18.5A | 50 mOhm @ 4A，10V | 2.5V @ 250μA | 10nC @ 10V | 170pF @ 15V | ||
|
|
|
Infineon Technologies |
12,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A PQFN
|
Tape & Reel (TR) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
|
|
|
Infineon Technologies |
14,050
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
|
Cut Tape (CT) | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
|
|
|
Infineon Technologies |
14,050
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
|
- | HEXFET | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-PQFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 3.6A | 63 mOhm @ 3.4A，4.5V | 1.1V @ 10μA | 2.8nC @ 4.5V | 270pF @ 25V | ||
|
|
|
Diodes Incorporated |
10,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.7A 8SO
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 2.1V @ 250μA | 13.2nC @ 10V | 697pF @ 15V | ||
|
|
|
Diodes Incorporated |
11,637
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.7A 8SO
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 2.1V @ 250μA | 13.2nC @ 10V | 697pF @ 15V | ||
|
|
|
Diodes Incorporated |
11,637
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6.7A 8SO
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.7A | 22 mOhm @ 10A，10V | 2.1V @ 250μA | 13.2nC @ 10V | 697pF @ 15V | ||
|
|
|
Diodes Incorporated |
2,500
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 40V 8-SOIC
|
Tape & Reel (TR) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 40V | 4.5A，3.7A | 45 mOhm @ 3.9A，10V | 3V @ 250μA | 12.5nC @ 10V | 574pF @ 20V | ||
|
|
|
Diodes Incorporated |
2,816
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 40V 8-SOIC
|
Cut Tape (CT) | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 40V | 4.5A，3.7A | 45 mOhm @ 3.9A，10V | 3V @ 250μA | 12.5nC @ 10V | 574pF @ 20V | ||
|
|
|
Diodes Incorporated |
2,816
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N/2P-CH 40V 8-SOIC
|
- | - | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 40V | 4.5A，3.7A | 45 mOhm @ 3.9A，10V | 3V @ 250μA | 12.5nC @ 10V | 574pF @ 20V | ||
|
|
|
ROHM Semiconductor |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6A/5A TSMT8
|
Tape & Reel (TR) | - | 150°C (TJ) | 8-SMD，Flat Lead | TSMT8 | N and P-Channel | Logic Level Gate | 30V | 6A，5A | 28 mOhm @ 6A，10V | 2.5V @ 1mA | 5.5nC @ 5V | 390pF @ 10V | ||
|
|
|
ROHM Semiconductor |
7,340
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6A/5A TSMT8
|
Cut Tape (CT) | - | 150°C (TJ) | 8-SMD，Flat Lead | TSMT8 | N and P-Channel | Logic Level Gate | 30V | 6A，5A | 28 mOhm @ 6A，10V | 2.5V @ 1mA | 5.5nC @ 5V | 390pF @ 10V |
