Drain to Source Voltage (Vdss):
Discover 34 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Package / Case Supplier Device Package Mounting Type FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDME1034CZT
ON Semiconductor
10,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6-MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount N and P-Channel Logic Level Gate 20V 3.8A,2.6A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
FDME1034CZT
ON Semiconductor
11,046
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6-MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount N and P-Channel Logic Level Gate 20V 3.8A,2.6A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
FDME1034CZT
ON Semiconductor
11,046
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6-MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount N and P-Channel Logic Level Gate 20V 3.8A,2.6A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
FDME1024NZT
ON Semiconductor
30,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3.8A 6-MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 N-Channel (Dual) Logic Level Gate 20V 3.8A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
FDME1024NZT
ON Semiconductor
35,247
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3.8A 6-MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 N-Channel (Dual) Logic Level Gate 20V 3.8A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
FDME1024NZT
ON Semiconductor
35,247
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 3.8A 6-MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 N-Channel (Dual) Logic Level Gate 20V 3.8A 66 mOhm @ 3.4A,4.5V 1V @ 250μA 4.2nC @ 4.5V 300pF @ 10V
DMP2240UDM-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2A SOT-26
Tape & Reel (TR) - -65°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2A 150 mOhm @ 2A,4.5V 1V @ 250μA - 320pF @ 16V
DMP2240UDM-7
Diodes Incorporated
10,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2A SOT-26
Cut Tape (CT) - -65°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2A 150 mOhm @ 2A,4.5V 1V @ 250μA - 320pF @ 16V
DMP2240UDM-7
Diodes Incorporated
10,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2A SOT-26
- - -65°C ~ 150°C (TJ) SOT-23-6 SOT-26 Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2A 150 mOhm @ 2A,4.5V 1V @ 250μA - 320pF @ 16V
FDME1023PZT
ON Semiconductor
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.6A 6-MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2.6A 142 mOhm @ 2.3A,4.5V 1V @ 250μA 7.7nC @ 4.5V 405pF @ 10V
FDME1023PZT
ON Semiconductor
7,964
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.6A 6-MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2.6A 142 mOhm @ 2.3A,4.5V 1V @ 250μA 7.7nC @ 4.5V 405pF @ 10V
FDME1023PZT
ON Semiconductor
7,964
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 2.6A 6-MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-UFDFN Exposed Pad 6-MicroFET (1.6x1.6) Surface Mount 2 P-Channel (Dual) Logic Level Gate 20V 2.6A 142 mOhm @ 2.3A,4.5V 1V @ 250μA 7.7nC @ 4.5V 405pF @ 10V
QS8J5TR
ROHM Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 5A TSMT8
Tape & Reel (TR) - 150°C (TJ) 8-SMD,Flat Lead TSMT8 Surface Mount 2 P-Channel (Dual) Logic Level Gate 30V 5A 39 mOhm @ 5A,10V 2.5V @ 1mA 19nC @ 10V 1100pF @ 10V
ALD1108EPCL
Advanced Linear Devices Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 10V 16DIP
Tube EPAD 0°C ~ 70°C (TJ) 16-DIP (0.300",7.62mm) 16-PDIP Through Hole 4 N-Channel,Matched Pair Standard 10V - 500 Ohm @ 5V 1.01V @ 1μA - 25pF @ 5V
ALD1108ESCL
Advanced Linear Devices Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 4N-CH 10V 16SOIC
Tube EPAD 0°C ~ 70°C (TJ) 16-SOIC (0.154",3.90mm Width) 16-SOIC Surface Mount 4 N-Channel,Matched Pair Standard 10V - 500 Ohm @ 5V 1.01V @ 1μA - 25pF @ 5V
ALD1110EPAL
Advanced Linear Devices Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 10V 8DIP
Tube EPAD 0°C ~ 70°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Through Hole 2 N-Channel (Dual) Matched Pair Standard 10V - 500 Ohm @ 5V 1.01V @ 1μA - 2.5pF @ 5V
ALD1110ESAL
Advanced Linear Devices Inc.
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 10V 8SOIC
Tube EPAD 0°C ~ 70°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount 2 N-Channel (Dual) Matched Pair Standard 10V - 500 Ohm @ 5V 1.01V @ 1μA - 2.5pF @ 5V
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP Surface Mount N and P-Channel Logic Level Gate 20V 6A,4.4A 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP Surface Mount N and P-Channel Logic Level Gate 20V 6A,4.4A 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V
FDW2520C
ON Semiconductor
Inquiry
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MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6A/4.4A 8TSSOP
- PowerTrench -55°C ~ 150°C (TJ) 8-TSSOP (0.173",4.40mm Width) 8-TSSOP Surface Mount N and P-Channel Logic Level Gate 20V 6A,4.4A 18 mOhm @ 6A,4.5V 1.5V @ 250μA 20nC @ 4.5V 1325pF @ 10V