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- Supplier Device Package：
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- Power - Max：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 40 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
106
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 5N-CH 650V 36A F1 MODULE
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- | -40°C ~ 150°C (TJ) | F1 Module | F1 | Chassis Mount | 250W | 5 N-Channel (Solar Inverter) | Standard | 650V | 36A | 90 mOhm @ 27A，10V | 3.8V @ 250μA | - | - | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 1200V 100A MODULE
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CoolSiC | -40°C ~ 150°C (TJ) | Module | Module | Chassis Mount | 20mW | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 100A | 11 mOhm @ 100A，15V | 5.55V @ 40mA | 250nC @ 15V | 7950pF @ 800V | ||
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Cree/Wolfspeed |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 1200V 29.5A MODULE
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Z-Rec | -40°C ~ 150°C (TJ) | Module | Module | Chassis Mount | 167W | 6 N-Channel (3-Phase Bridge) | Standard | 1200V (1.2kV) | 29.5A | 98 mOhm @ 20A，20V | 2.2V @ 1mA (Typ) | 61.5nC @ 20V | 900pF @ 800V | ||
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ROHM Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 1200V 300A
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- | -40°C ~ 150°C (TJ) | Module | Module | Chassis Mount | 1875W | 2 N-Channel (Half Bridge) | Standard | 1200V (1.2kV) | 300A | - | 4V @ 68mA | - | 35000pF @ 10V | ||
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Cree/Wolfspeed |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 1700V 325A MODULE
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Z-Rec | -40°C ~ 150°C (TJ) | Module | Module | Chassis Mount | 1760W | 2 N-Channel (Half Bridge) | Standard | 1700V (1.7kV) | 325A | 10 mOhm @ 225A，20V | 2.3V @ 15mA (Typ) | 1076nC @ 20V | 20000pF @ 1000V | ||
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Infineon Technologies |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 1200V 50A MODULE
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CoolSiC | -40°C ~ 150°C (TJ) | Module | Module | Chassis Mount | 20mW | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 50A | 23 mOhm @ 50A，15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 30V BUMPED DIE
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eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 30V | 10A (Ta)，40A (Ta) | 8.2 mOhm @ 25A，5V，2.1 mOhm @ 25A，5V | 2.5V @ 4mA，2.5V @ 16mA | 4.9nC @ 15V，19nC @ 15V | 475pF @ 15V，1960pF @ 15V | ||
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EPC |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 60V BUMPED DIE
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eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 9.5A，38A | 11.5 mOhm @ 20A，5V | 2.5V @ 2mA | 2.7nC @ 5V | 300pF @ 30V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 60V BUMPED DIE
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eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A，5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 80V BUMPED DIE
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eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 23A | 5.5 mOhm @ 20A，5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | ||
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EPC |
Inquiry
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-
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MOQ: 1 MPQ: 1
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TRANS GAN 2N-CH 100V BUMPED DIE
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eGaN | -40°C ~ 150°C (TJ) | Die | Die | Surface Mount | - | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 100V | 23A | 6.3 mOhm @ 20A，5V | 2.5V @ 5.5mA | 7nC @ 5V | 800pF @ 50V | ||
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Microchip Technology |
2,344
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 6N/6P-CH 200V 56VQFN
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- | -55°C ~ 150°C (TJ) | 56-VFQFN Exposed Pad | 56-QFN (8x8) | Surface Mount | - | 6 N and 6 P-Channel | Standard | 200V | - | 8 Ohm @ 1A，10V | 2.4V @ 1mA | - | 50pF @ 25V | |||
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ROHM Semiconductor |
8
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3 days |
-
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MOQ: 1 MPQ: 1
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SIC POWER MODULE-1200V-80A
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- | 175°C (TJ) | Module | Module | Chassis Mount | 600W | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 80A | - | 4V @ 13.2mA | - | 800pF @ 10V | |||
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Microsemi Corporation |
7
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 600V 95A SP3
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CoolMOS | -40°C ~ 150°C (TJ) | SP3 | SP3 | Chassis Mount | 462W | 2 N Channel (Dual Buck Chopper) | Super Junction | 600V | 95A | 24 mOhm @ 47.5A，10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | |||
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Microchip Technology |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 250V 1.1A 8VDFN
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- | -55°C ~ 150°C (TJ) | 8-VDFN Exposed Pad | 8-DFN (5x5) | Surface Mount | - | 2 N-Channel (Dual) | Depletion Mode | 250V | 1.1A | 3.5 Ohm @ 1A，0V | - | 7.04nC @ 1.5V | 1000pF @ 25V | |||
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IXYS |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 150V 50A 24-SMD
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- | -55°C ~ 175°C (TJ) | ISOPLUS-DIL? | ISOPLUS-DIL? | Surface Mount | - | 6 N-Channel (3-Phase Bridge) | Standard | 150V | 50A | 24 mOhm @ 38A，10V | 4.5V @ 1mA | 97nC @ 10V | 5800pF @ 25V | ||
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IXYS |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 150V 50A 24-SMD
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- | -55°C ~ 175°C (TJ) | ISOPLUS-DIL? | ISOPLUS-DIL? | Surface Mount | - | 6 N-Channel (3-Phase Bridge) | Standard | 150V | 50A | 24 mOhm @ 38A，10V | 4.5V @ 1mA | 97nC @ 10V | 5800pF @ 25V | ||
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Microsemi Corporation |
1
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 6N-CH 600V 95A SP6-P
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CoolMOS | -40°C ~ 150°C (TJ) | SP6 | SP6-P | Chassis Mount | 462W | 6 N-Channel (3-Phase Bridge) | Super Junction | 600V | 95A | 24 mOhm @ 47.5A，10V | 3.9V @ 5mA | 300nC @ 10V | 14400pF @ 25V | |||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 900V 30A SP1
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CoolMOS | -40°C ~ 150°C (TJ) | SP1 | SP1 | Chassis Mount | 250W | 2 N Channel (Dual Buck Chopper) | Super Junction | 900V | 30A | 120 mOhm @ 26A，10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | ||
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Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 900V 30A SP1
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CoolMOS | -40°C ~ 150°C (TJ) | SP1 | SP1 | Chassis Mount | 250W | 2 N Channel (Dual Buck Chopper) | Super Junction | 900V | 30A | 120 mOhm @ 26A，10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V |
