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Discover 142 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Infineon Technologies |
21,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
22,363
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V SOT363
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- | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 500mW | N and P-Channel | Logic Level Gate | 20V | 950mA，530mA | 350 mOhm @ 950mA，4.5V | 1.2V @ 1.6μA | 0.34nC @ 4.5V | 47pF @ 10V | ||
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Infineon Technologies |
15,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A 8DSO
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15 mOhm @ 9.3A，10V | 2V @ 250μA | 17nC @ 10V | 1300pF @ 15V | ||
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Infineon Technologies |
17,148
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A 8DSO
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15 mOhm @ 9.3A，10V | 2V @ 250μA | 17nC @ 10V | 1300pF @ 15V | ||
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Infineon Technologies |
17,148
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 8A 8DSO
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A | 15 mOhm @ 9.3A，10V | 2V @ 250μA | 17nC @ 10V | 1300pF @ 15V | ||
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Infineon Technologies |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 20A TDSON-8
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Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 60W | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22 mOhm @ 17A，10V | 2.1V @ 25μA | 27nC @ 10V | 1755pF @ 25V | ||
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Infineon Technologies |
8,171
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 20A TDSON-8
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Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 60W | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22 mOhm @ 17A，10V | 2.1V @ 25μA | 27nC @ 10V | 1755pF @ 25V | ||
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Infineon Technologies |
8,171
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 100V 20A TDSON-8
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- | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 60W | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 22 mOhm @ 17A，10V | 2.1V @ 25μA | 27nC @ 10V | 1755pF @ 25V | ||
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Infineon Technologies |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 20A TDSON-8
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Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A，10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||
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Infineon Technologies |
7,543
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 40V 20A TDSON-8
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Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A，10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||
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Infineon Technologies |
7,543
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 40V 20A TDSON-8
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- | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A，10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||
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Infineon Technologies |
93,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.39A SOT363
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
93,437
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.39A SOT363
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
93,437
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.39A SOT363
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- | -55°C ~ 150°C (TJ) | 6-VSSOP，SC-88，SOT-363 | PG-SOT363-6 | 250mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 390mA | 1.2 Ohm @ 390mA，4.5V | 1.2V @ 1.5μA | 0.62nC @ 4.5V | 56pF @ 15V | ||
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Infineon Technologies |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 6A 8DSO
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22 mOhm @ 7.7A，10V | 2.1V @ 250μA | 10nC @ 10V | 800pF @ 15V | ||
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Infineon Technologies |
11,081
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6A 8DSO
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22 mOhm @ 7.7A，10V | 2.1V @ 250μA | 10nC @ 10V | 800pF @ 15V | ||
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Infineon Technologies |
11,081
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 6A 8DSO
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- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | PG-DSO-8 | 1.4W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A | 22 mOhm @ 7.7A，10V | 2.1V @ 250μA | 10nC @ 10V | 800pF @ 15V | ||
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Infineon Technologies |
5,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 20A WISON-8
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-PowerVDFN | PG-WISON-8 | 17W | 2 N-Channel (Dual) | Logic Level Gate，4.5V Drive | 30V | 20A (Tc) | 18 mOhm @ 9A，10V | 2V @ 250μA | 2.6nC @ 4.5V | 360pF @ 15V | ||
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Infineon Technologies |
5,451
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2 N-CH 30V 20A WISON-8
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-PowerVDFN | PG-WISON-8 | 17W | 2 N-Channel (Dual) | Logic Level Gate，4.5V Drive | 30V | 20A (Tc) | 18 mOhm @ 9A，10V | 2V @ 250μA | 2.6nC @ 4.5V | 360pF @ 15V |
