- Packaging：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 9 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
3,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 3.1A 12-MLP
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Tape & Reel (TR) | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 215pF @ 15V | ||
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ON Semiconductor |
3,817
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 3.1A 12-MLP
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Cut Tape (CT) | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 215pF @ 15V | ||
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ON Semiconductor |
3,817
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 100V 3.1A 12-MLP
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- | 1.9W | 4 N-Channel (H-Bridge) | Standard | 100V | 3.1A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 215pF @ 15V | ||
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ON Semiconductor |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 100V/80V 12-MLP
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Tape & Reel (TR) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 210pF @ 50V | ||
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ON Semiconductor |
644
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 100V/80V 12-MLP
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Cut Tape (CT) | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 210pF @ 50V | ||
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ON Semiconductor |
644
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N/2P-CH 100V/80V 12-MLP
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- | 2.5W | 2 N and 2 P-Channel (H-Bridge) | Logic Level Gate | 100V，80V | 3.4A，2.6A | 110 mOhm @ 3A，10V | 4V @ 250μA | 5nC @ 10V | 210pF @ 50V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 60V 8A MLP4.5X5
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Tape & Reel (TR) | 1.9W | 4 N-Channel (H-Bridge) | Logic Level Gate | 60V | 8A | 17.5 mOhm @ 8A，10V | 3V @ 250μA | 33nC @ 10V | 2295pF @ 30V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 60V 8A MLP4.5X5
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Cut Tape (CT) | 1.9W | 4 N-Channel (H-Bridge) | Logic Level Gate | 60V | 8A | 17.5 mOhm @ 8A，10V | 3V @ 250μA | 33nC @ 10V | 2295pF @ 30V | ||
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ON Semiconductor |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 60V 8A MLP4.5X5
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- | 1.9W | 4 N-Channel (H-Bridge) | Logic Level Gate | 60V | 8A | 17.5 mOhm @ 8A，10V | 3V @ 250μA | 33nC @ 10V | 2295pF @ 30V |
