- Packaging:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Power - Max:
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Vgs(th) (Max) @ Id:
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Discover 75 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Infineon Technologies |
9,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 1.4A,1.5A | 160 mOhm @ 1.4A,10V | 2V @ 3.7μA | 0.6nC @ 5V | 282pF @ 15V | ||||
Infineon Technologies |
9,262
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 1.4A,1.5A | 160 mOhm @ 1.4A,10V | 2V @ 3.7μA | 0.6nC @ 5V | 282pF @ 15V | ||||
Infineon Technologies |
9,262
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
|
- | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 1.4A,1.5A | 160 mOhm @ 1.4A,10V | 2V @ 3.7μA | 0.6nC @ 5V | 282pF @ 15V | ||||
Infineon Technologies |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 2.3A,2A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.5nC @ 10V | 275pF @ 15V | ||||
Infineon Technologies |
3,190
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 2.3A,2A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.5nC @ 10V | 275pF @ 15V | ||||
Infineon Technologies |
3,190
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
|
- | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | N and P-Channel Complementary | Logic Level Gate,4.5V Drive | 30V | 2.3A,2A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.5nC @ 10V | 275pF @ 15V | ||||
Infineon Technologies |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 54W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2 mOhm @ 17A,10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||||
Infineon Technologies |
8,898
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 54W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2 mOhm @ 17A,10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||||
Infineon Technologies |
8,898
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
- | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 54W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2 mOhm @ 17A,10V | 2.2V @ 22μA | 39nC @ 10V | 3050pF @ 25V | ||||
Infineon Technologies |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 2A (Tc) | 35 mOhm @ 15A,10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||||
Infineon Technologies |
9,110
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 2A (Tc) | 35 mOhm @ 15A,10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||||
Infineon Technologies |
9,110
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
- | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Logic Level Gate | 55V | 2A (Tc) | 35 mOhm @ 15A,10V | 2V @ 27μA | 23nC @ 10V | 790pF @ 25V | ||||
Infineon Technologies |
5,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A,10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||||
Infineon Technologies |
6,638
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A,10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||||
Infineon Technologies |
6,638
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
- | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-10 | 65W | 2 N-Channel (Dual) | Standard | 40V | 20A | 7.6 mOhm @ 17A,10V | 4V @ 30μA | 36nC @ 10V | 2940pF @ 25V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 2.3A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
2,377
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 2.3A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
2,377
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 2.3A 6TSOP
|
- | -55°C ~ 150°C (TJ) | SOT-23-6 Thin,TSOT-23-6 | PG-TSOP6-6 | 500mW | 2 N-Channel (Dual) | Logic Level Gate,4.5V Drive | 30V | 2.3A | 57 mOhm @ 2.3A,10V | 2V @ 11μA | 1.6nC @ 5V | 275pF @ 15V | ||||
Infineon Technologies |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Tape & Reel (TR) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 41W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6 mOhm @ 17A,10V | 2.2V @ 15μA | 26nC @ 10V | 1990pF @ 25V | ||||
Infineon Technologies |
4,786
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 8TDSON
|
Cut Tape (CT) | -55°C ~ 175°C (TJ) | 8-PowerVDFN | PG-TDSON-8-4 | 41W | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 11.6 mOhm @ 17A,10V | 2.2V @ 15μA | 26nC @ 10V | 1990pF @ 25V |