Drain to Source Voltage (Vdss):
Discover 75 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Package / Case Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
BSL316CH6327XTSA1
Infineon Technologies
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 1.4A,1.5A 160 mOhm @ 1.4A,10V 2V @ 3.7μA 0.6nC @ 5V 282pF @ 15V
BSL316CH6327XTSA1
Infineon Technologies
9,262
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 1.4A,1.5A 160 mOhm @ 1.4A,10V 2V @ 3.7μA 0.6nC @ 5V 282pF @ 15V
BSL316CH6327XTSA1
Infineon Technologies
9,262
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 1.4A/1.5A TSOP
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 1.4A,1.5A 160 mOhm @ 1.4A,10V 2V @ 3.7μA 0.6nC @ 5V 282pF @ 15V
BSL308CH6327XTSA1
Infineon Technologies
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 2.3A,2A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.5nC @ 10V 275pF @ 15V
BSL308CH6327XTSA1
Infineon Technologies
3,190
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 2.3A,2A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.5nC @ 10V 275pF @ 15V
BSL308CH6327XTSA1
Infineon Technologies
3,190
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 2.3A/2A 6TSOP
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW N and P-Channel Complementary Logic Level Gate,4.5V Drive 30V 2.3A,2A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.5nC @ 10V 275pF @ 15V
IPG20N04S4L08ATMA1
Infineon Technologies
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Tape & Reel (TR) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 54W 2 N-Channel (Dual) Logic Level Gate 40V 20A 8.2 mOhm @ 17A,10V 2.2V @ 22μA 39nC @ 10V 3050pF @ 25V
IPG20N04S4L08ATMA1
Infineon Technologies
8,898
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Cut Tape (CT) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 54W 2 N-Channel (Dual) Logic Level Gate 40V 20A 8.2 mOhm @ 17A,10V 2.2V @ 22μA 39nC @ 10V 3050pF @ 25V
IPG20N04S4L08ATMA1
Infineon Technologies
8,898
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
- -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 54W 2 N-Channel (Dual) Logic Level Gate 40V 20A 8.2 mOhm @ 17A,10V 2.2V @ 22μA 39nC @ 10V 3050pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Tape & Reel (TR) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 23nC @ 10V 790pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
9,110
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Cut Tape (CT) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 23nC @ 10V 790pF @ 25V
IPG20N06S2L35AATMA1
Infineon Technologies
9,110
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
- -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Logic Level Gate 55V 2A (Tc) 35 mOhm @ 15A,10V 2V @ 27μA 23nC @ 10V 790pF @ 25V
IPG20N04S408AATMA1
Infineon Technologies
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Tape & Reel (TR) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Standard 40V 20A 7.6 mOhm @ 17A,10V 4V @ 30μA 36nC @ 10V 2940pF @ 25V
IPG20N04S408AATMA1
Infineon Technologies
6,638
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Cut Tape (CT) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Standard 40V 20A 7.6 mOhm @ 17A,10V 4V @ 30μA 36nC @ 10V 2940pF @ 25V
IPG20N04S408AATMA1
Infineon Technologies
6,638
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
- -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-10 65W 2 N-Channel (Dual) Standard 40V 20A 7.6 mOhm @ 17A,10V 4V @ 30μA 36nC @ 10V 2940pF @ 25V
BSL306NH6327XTSA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 2.3A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
BSL306NH6327XTSA1
Infineon Technologies
2,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
Cut Tape (CT) -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 2.3A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
BSL306NH6327XTSA1
Infineon Technologies
2,377
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 2.3A 6TSOP
- -55°C ~ 150°C (TJ) SOT-23-6 Thin,TSOT-23-6 PG-TSOP6-6 500mW 2 N-Channel (Dual) Logic Level Gate,4.5V Drive 30V 2.3A 57 mOhm @ 2.3A,10V 2V @ 11μA 1.6nC @ 5V 275pF @ 15V
IPG20N04S4L11ATMA1
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Tape & Reel (TR) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 41W 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6 mOhm @ 17A,10V 2.2V @ 15μA 26nC @ 10V 1990pF @ 25V
IPG20N04S4L11ATMA1
Infineon Technologies
4,786
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 8TDSON
Cut Tape (CT) -55°C ~ 175°C (TJ) 8-PowerVDFN PG-TDSON-8-4 41W 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6 mOhm @ 17A,10V 2.2V @ 15μA 26nC @ 10V 1990pF @ 25V