Supplier Device Package:
Power - Max:
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Package / Case Supplier Device Package Power - Max FET Type Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
IRFH4251DTRPBF
Infineon Technologies
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 64A/188A PQFN
Tape & Reel (TR) 8-PowerVDFN PQFN (5x6) 31W,63W 2 N-Channel (Dual),Schottky 64A,188A 3.2 mOhm @ 30A,10V 15nC @ 4.5V 1314pF @ 13V
IRFH4251DTRPBF
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 64A/188A PQFN
Cut Tape (CT) 8-PowerVDFN PQFN (5x6) 31W,63W 2 N-Channel (Dual),Schottky 64A,188A 3.2 mOhm @ 30A,10V 15nC @ 4.5V 1314pF @ 13V
IRFH4251DTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 64A/188A PQFN
- 8-PowerVDFN PQFN (5x6) 31W,63W 2 N-Channel (Dual),Schottky 64A,188A 3.2 mOhm @ 30A,10V 15nC @ 4.5V 1314pF @ 13V
IRFHE4250DTRPBF
Infineon Technologies
Inquiry
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-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 86A/303A PQFN
Tape & Reel (TR) 32-PowerWFQFN 32-PQFN (6x6) 156W 2 N-Channel (Dual) 86A,303A 2.75 mOhm @ 27A,10V 20nC @ 4.5V 1735pF @ 13V
IRFHE4250DTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 86A/303A PQFN
Cut Tape (CT) 32-PowerWFQFN 32-PQFN (6x6) 156W 2 N-Channel (Dual) 86A,303A 2.75 mOhm @ 27A,10V 20nC @ 4.5V 1735pF @ 13V
IRFHE4250DTRPBF
Infineon Technologies
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 86A/303A PQFN
- 32-PowerWFQFN 32-PQFN (6x6) 156W 2 N-Channel (Dual) 86A,303A 2.75 mOhm @ 27A,10V 20nC @ 4.5V 1735pF @ 13V