Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Package / Case Supplier Device Package Power - Max FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
APTM100H45SCTG
Microsemi Corporation
28
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 1000V 18A SP4
SP4 SP4 357W 4 N-Channel (H-Bridge) 1000V (1kV) 18A 540 mOhm @ 9A,10V 5V @ 2.5mA 154nC @ 10V 4350pF @ 25V
APTM120H29FG
Microsemi Corporation
9
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 1200V 34A SP6
SP6 SP6 780W 4 N-Channel (H-Bridge) 1200V (1.2kV) 34A 348 mOhm @ 17A,10V 5V @ 5mA 374nC @ 10V 10300pF @ 25V
APTM50AM38FTG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 500V 90A SP4
SP4 SP4 694W 2 N-Channel (Half Bridge) 500V 90A 45 mOhm @ 45A,10V 5V @ 5mA 246nC @ 10V 11200pF @ 25V
APTM100TA35SCTPG
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 6N-CH 1000V 22A SP6P
Module SP6-P 390W 6 N-Channel (3-Phase Bridge) 1000V (1kV) 22A 420 mOhm @ 11A,10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V
APTM100VDA35T3G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1000V 22A SP3
SP3 SP3 390W 2 N-Channel (Dual) 1000V (1kV) 22A 420 mOhm @ 11A,10V 5V @ 2.5mA 186nC @ 10V 5200pF @ 25V
APTM120VDA57T3G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 1200V 17A SP3
SP3 SP3 390W 2 N-Channel (Dual) 1200V (1.2kV) 17A 684 mOhm @ 8.5A,10V 5V @ 2.5mA 187nC @ 10V 5155pF @ 25V
APTM20DHM16T3G
Microsemi Corporation
Inquiry
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MOQ: 1  MPQ: 1
MOSFET 2N-CH 200V 104A SP3
SP3 SP3 390W 2 N-Channel (Dual) Asymmetrical 200V 104A 19 mOhm @ 52A,10V 5V @ 2.5mA 140nC @ 10V 7220pF @ 25V