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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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Discover 587 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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ON Semiconductor |
18,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.6A SC70-6
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SC-70-6 | 300mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 600mA | 420 mOhm @ 600mA，4.5V | 1.5V @ 250μA | 2nC @ 4.5V | 114pF @ 10V | ||
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ON Semiconductor |
23,800
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 20V 0.6A SC70-6
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SC-70-6 | 300mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 600mA | 420 mOhm @ 600mA，4.5V | 1.5V @ 250μA | 2nC @ 4.5V | 114pF @ 10V | ||
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ON Semiconductor |
23,800
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 0.6A SC70-6
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- | -55°C ~ 150°C (TJ) | 6-TSSOP，SC-88，SOT-363 | SC-70-6 | 300mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 600mA | 420 mOhm @ 600mA，4.5V | 1.5V @ 250μA | 2nC @ 4.5V | 114pF @ 10V | ||
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ON Semiconductor |
24,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 3A SSOT-6
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
24,030
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 3A SSOT-6
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
24,030
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 3A SSOT-6
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- | -55°C ~ 150°C (TJ) | SOT-23-6 Thin，TSOT-23-6 | SuperSOT?-6 | 700mW | 2 N-Channel (Dual) | Standard | 20V | 3A | 70 mOhm @ 3A，4.5V | 1.5V @ 250μA | 4.6nC @ 4.5V | 324pF @ 10V | ||
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ON Semiconductor |
18,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2P-CH 30V 2.9A MICROFET6
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
18,410
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 30V 2.9A MICROFET6
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- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 30V | 2.9A | 90 mOhm @ 2.9A，4.5V | 1V @ 250μA | 11nC @ 4.5V | 530pF @ 15V | ||
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ON Semiconductor |
10,000
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 6-MICROFET
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 600mW | N and P-Channel | Logic Level Gate | 20V | 3.8A，2.6A | 66 mOhm @ 3.4A，4.5V | 1V @ 250μA | 4.2nC @ 4.5V | 300pF @ 10V | ||
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ON Semiconductor |
11,046
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 6-MICROFET
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 600mW | N and P-Channel | Logic Level Gate | 20V | 3.8A，2.6A | 66 mOhm @ 3.4A，4.5V | 1V @ 250μA | 4.2nC @ 4.5V | 300pF @ 10V | ||
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ON Semiconductor |
11,046
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 6-MICROFET
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- | -55°C ~ 150°C (TJ) | 6-UFDFN Exposed Pad | 6-MicroFET (1.6x1.6) | 600mW | N and P-Channel | Logic Level Gate | 20V | 3.8A，2.6A | 66 mOhm @ 3.4A，4.5V | 1V @ 250μA | 4.2nC @ 4.5V | 300pF @ 10V | ||
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ON Semiconductor |
47,500
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 20V 6.5A 8SOIC
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.5A | 30 mOhm @ 6.5A，4.5V | 1.5V @ 250μA | 9nC @ 4.5V | 650pF @ 10V | ||
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ON Semiconductor |
48,498
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.5A 8SOIC
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.5A | 30 mOhm @ 6.5A，4.5V | 1.5V @ 250μA | 9nC @ 4.5V | 650pF @ 10V | ||
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ON Semiconductor |
48,498
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 6.5A 8SOIC
|
- | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SO | 900mW | 2 N-Channel (Dual) | Logic Level Gate | 20V | 6.5A | 30 mOhm @ 6.5A，4.5V | 1.5V @ 250μA | 9nC @ 4.5V | 650pF @ 10V | ||
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ON Semiconductor |
111,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V MICROFET 2X2
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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|
ON Semiconductor |
114,544
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V MICROFET 2X2
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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|
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ON Semiconductor |
114,544
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V MICROFET 2X2
|
- | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | N and P-Channel | Logic Level Gate | 20V | 3.7A，3.1A | 68 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 6nC @ 4.5V | 340pF @ 10V | ||
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ON Semiconductor |
9,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.7A MICROFET
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Tape & Reel (TR) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.7A | 72 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 12nC @ 4.5V | 655pF @ 10V | ||
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ON Semiconductor |
10,668
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 3.7A MICROFET
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Cut Tape (CT) | -55°C ~ 150°C (TJ) | 6-VDFN Exposed Pad | 6-MicroFET (2x2) | 700mW | 2 P-Channel (Dual) | Logic Level Gate | 20V | 3.7A | 72 mOhm @ 3.7A，4.5V | 1.5V @ 250μA | 12nC @ 4.5V | 655pF @ 10V |
