- Series：
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- Operating Temperature：
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- Power - Max：
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- FET Feature：
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- Drain to Source Voltage (Vdss)：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 27 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Operating Temperature | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | |
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Advanced Linear Devices Inc. |
55
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 0.08A 16DIP
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EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Logic Level Gate | 10.6V | 80mA | 25 Ohm | 10mV @ 10μA | 15pF @ 5V | ||
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Advanced Linear Devices Inc. |
50
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | 12mA，3mA | 500 Ohm @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
32
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | - | 500 Ohm @ 4.2V | 220mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
43
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Depletion Mode | 10.6V | 12mA，3mA | 500 Ohm @ 3.6V | 380mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
43
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 380mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
40
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 780mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
37
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 180mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
31
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 20mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
50
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 180mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
50
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 780mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
48
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 380mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
15
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 16DIP
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EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | - | 500 Ohm @ 4V | 20mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
15
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 10.6V 16DIP
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EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | - | 500 Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
1
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | 12mA，3mA | 500 Ohm @ 4.8V | 810mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
14
|
3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4 P-CH 8V 16PDIP
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EPAD，Zero Threshold | 0°C ~ 70°C | 500mW | 4 P-Channel，Matched Pair | Standard | 8V | - | - | 20mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 10.6V 0.08A 16DIP
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EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10μA | - | ||
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Advanced Linear Devices Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | 12mA，3mA | 500 Ohm @ 4.8V | 820mV @ 1μA | 2.5pF @ 5V | ||
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Advanced Linear Devices Inc. |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 10.6V 0.08A 16DIP
|
EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10μA | - | ||
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Advanced Linear Devices Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 10.6V 0.08A 16DIP
|
EPAD，Zero Threshold | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Logic Level Gate | 10.6V | 80mA | - | 20mV @ 10μA | - | ||
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Advanced Linear Devices Inc. |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 10.6V 16DIP
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EPAD | 0°C ~ 70°C (TJ) | 500mW | 4 N-Channel，Matched Pair | Standard | 10.6V | 12mA，3mA | 500 Ohm @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V |
