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Discover 377 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Series | Operating Temperature | Supplier Device Package | Mounting Type | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Vishay Siliconix |
21,000
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET N/P-CH 20V 4A 1206-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.4A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
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Vishay Siliconix |
21,054
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.4A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
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Vishay Siliconix |
21,054
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.4A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
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Vishay Siliconix |
72,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A，4.5V | 800mV @ 250μA | 11.3nC @ 5V | 632pF @ 10V | ||
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Vishay Siliconix |
72,375
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A，4.5V | 800mV @ 250μA | 11.3nC @ 5V | 632pF @ 10V | ||
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Vishay Siliconix |
72,375
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A | 36 mOhm @ 6A，4.5V | 800mV @ 250μA | 11.3nC @ 5V | 632pF @ 10V | ||
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Vishay Siliconix |
Inquiry
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-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 30V 4A 1206-8
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 65 mOhm @ 3.1A，10V | 3V @ 250μA | 7nC @ 10V | 220pF @ 15V | ||
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Vishay Siliconix |
1,247
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4A 1206-8
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 65 mOhm @ 3.1A，10V | 3V @ 250μA | 7nC @ 10V | 220pF @ 15V | ||
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Vishay Siliconix |
1,247
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 30V 4A 1206-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.12W | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 65 mOhm @ 3.1A，10V | 3V @ 250μA | 7nC @ 10V | 220pF @ 15V | ||
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Vishay Siliconix |
12,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 4.4A 1206-8
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Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.4A | 40 mOhm @ 4.4A，4.5V | 1V @ 250μA | 7.5nC @ 4.5V | - | ||
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Vishay Siliconix |
14,383
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 4.4A 1206-8
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Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.4A | 40 mOhm @ 4.4A，4.5V | 1V @ 250μA | 7.5nC @ 4.5V | - | ||
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Vishay Siliconix |
14,383
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 4.4A 1206-8
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- | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 1.1W | 2 N-Channel (Dual) | Logic Level Gate | 20V | 4.4A | 40 mOhm @ 4.4A，4.5V | 1V @ 250μA | 7.5nC @ 4.5V | - | ||
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Vishay Siliconix |
45,000
|
3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 4A 1206-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | 2 P-Channel (Dual) | Standard | 20V | 4A | 100 mOhm @ 3.1A，4.5V | 1V @ 250μA | 11nC @ 5V | 455pF @ 10V | ||
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Vishay Siliconix |
45,914
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 4A 1206-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | 2 P-Channel (Dual) | Standard | 20V | 4A | 100 mOhm @ 3.1A，4.5V | 1V @ 250μA | 11nC @ 5V | 455pF @ 10V | ||
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|
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Vishay Siliconix |
45,914
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2P-CH 20V 4A 1206-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | 2 P-Channel (Dual) | Standard | 20V | 4A | 100 mOhm @ 3.1A，4.5V | 1V @ 250μA | 11nC @ 5V | 455pF @ 10V | ||
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Vishay Siliconix |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
Tape & Reel (TR) | TrenchFET | -55°C ~ 150°C (TJ) | 1206-8 ChipFET? | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.3A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
|
|
|
Vishay Siliconix |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
Cut Tape (CT) | TrenchFET | -55°C ~ 150°C (TJ) | - | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.3A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
|
|
|
Vishay Siliconix |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 4A 1206-8
|
- | TrenchFET | -55°C ~ 150°C (TJ) | - | Surface Mount | 3.1W | N and P-Channel | Logic Level Gate | 20V | 4A，3.7A | 55 mOhm @ 4.3A，4.5V | 1.5V @ 250μA | 4.2nC @ 5V | 285pF @ 10V | ||
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ROHM Semiconductor |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6A/5A TSMT8
|
Tape & Reel (TR) | - | 150°C (TJ) | TSMT8 | Surface Mount | 1.5W | N and P-Channel | Logic Level Gate | 30V | 6A，5A | 28 mOhm @ 6A，10V | 2.5V @ 1mA | 5.5nC @ 5V | 390pF @ 10V | ||
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ROHM Semiconductor |
7,340
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 30V 6A/5A TSMT8
|
Cut Tape (CT) | - | 150°C (TJ) | TSMT8 | Surface Mount | 1.5W | N and P-Channel | Logic Level Gate | 30V | 6A，5A | 28 mOhm @ 6A，10V | 2.5V @ 1mA | 5.5nC @ 5V | 390pF @ 10V |
