FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMN2004DMK-7	Diodes Incorporated	129,000	3 days	-	MOSFET 2N-CH 20V 0.54A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.54A SOT-26	Tape & Reel (TR)	-	-65°C ~ 150°C (TJ)	SOT-26	225mW	2 N-Channel (Dual)	Logic Level Gate	20V	540mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMN2004DMK-7	Diodes Incorporated	130,545	3 days	-	MOSFET 2N-CH 20V 0.54A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.54A SOT-26	Cut Tape (CT)	-	-65°C ~ 150°C (TJ)	SOT-26	225mW	2 N-Channel (Dual)	Logic Level Gate	20V	540mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMN2004DMK-7	Diodes Incorporated	130,545	3 days	-	MOSFET 2N-CH 20V 0.54A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 0.54A SOT-26	-	-	-65°C ~ 150°C (TJ)	SOT-26	225mW	2 N-Channel (Dual)	Logic Level Gate	20V	540mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMC2700UDM-7	Diodes Incorporated	9,000	3 days	-	MOSFET N/P-CH 20V SOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-26	1.12W	N and P-Channel	Logic Level Gate	20V	1.34A，1.14A	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMC2700UDM-7	Diodes Incorporated	9,220	3 days	-	MOSFET N/P-CH 20V SOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-26	1.12W	N and P-Channel	Logic Level Gate	20V	1.34A，1.14A	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMC2700UDM-7	Diodes Incorporated	9,220	3 days	-	MOSFET N/P-CH 20V SOT26 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT26	-	-	-55°C ~ 150°C (TJ)	SOT-26	1.12W	N and P-Channel	Logic Level Gate	20V	1.34A，1.14A	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMN601DMK-7	Diodes Incorporated	18,000	3 days	-	MOSFET 2N-CH 60V 0.51A SOT26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.51A SOT26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-26	700mW	2 N-Channel (Dual)	Logic Level Gate	60V	510mA	2.4 Ohm @ 200mA，10V	2.5V @ 1mA	304nC @ 4.5V	50pF @ 25V
	DMN601DMK-7	Diodes Incorporated	20,247	3 days	-	MOSFET 2N-CH 60V 0.51A SOT26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.51A SOT26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-26	700mW	2 N-Channel (Dual)	Logic Level Gate	60V	510mA	2.4 Ohm @ 200mA，10V	2.5V @ 1mA	304nC @ 4.5V	50pF @ 25V
	DMN601DMK-7	Diodes Incorporated	20,247	3 days	-	MOSFET 2N-CH 60V 0.51A SOT26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.51A SOT26	-	-	-55°C ~ 150°C (TJ)	SOT-26	700mW	2 N-Channel (Dual)	Logic Level Gate	60V	510mA	2.4 Ohm @ 200mA，10V	2.5V @ 1mA	304nC @ 4.5V	50pF @ 25V
	DMN5L06DMK-7	Diodes Incorporated	12,000	3 days	-	MOSFET 2N-CH 50V 0.305A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.305A SOT-26	Tape & Reel (TR)	-	-65°C ~ 150°C (TJ)	SOT-26	400mW	2 N-Channel (Dual)	Logic Level Gate	50V	305mA	2 Ohm @ 50mA，5V	1V @ 250μA	-	50pF @ 25V
	DMN5L06DMK-7	Diodes Incorporated	12,804	3 days	-	MOSFET 2N-CH 50V 0.305A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.305A SOT-26	Cut Tape (CT)	-	-65°C ~ 150°C (TJ)	SOT-26	400mW	2 N-Channel (Dual)	Logic Level Gate	50V	305mA	2 Ohm @ 50mA，5V	1V @ 250μA	-	50pF @ 25V
	DMN5L06DMK-7	Diodes Incorporated	12,804	3 days	-	MOSFET 2N-CH 50V 0.305A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.305A SOT-26	-	-	-65°C ~ 150°C (TJ)	SOT-26	400mW	2 N-Channel (Dual)	Logic Level Gate	50V	305mA	2 Ohm @ 50mA，5V	1V @ 250μA	-	50pF @ 25V
	DMP2240UDM-7	Diodes Incorporated	6,000	3 days	-	MOSFET 2P-CH 20V 2A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 2A SOT-26	Tape & Reel (TR)	-	-65°C ~ 150°C (TJ)	SOT-26	600mW	2 P-Channel (Dual)	Logic Level Gate	20V	2A	150 mOhm @ 2A，4.5V	1V @ 250μA	-	320pF @ 16V
	DMP2240UDM-7	Diodes Incorporated	10,303	3 days	-	MOSFET 2P-CH 20V 2A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 2A SOT-26	Cut Tape (CT)	-	-65°C ~ 150°C (TJ)	SOT-26	600mW	2 P-Channel (Dual)	Logic Level Gate	20V	2A	150 mOhm @ 2A，4.5V	1V @ 250μA	-	320pF @ 16V
	DMP2240UDM-7	Diodes Incorporated	10,303	3 days	-	MOSFET 2P-CH 20V 2A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 2A SOT-26	-	-	-65°C ~ 150°C (TJ)	SOT-26	600mW	2 P-Channel (Dual)	Logic Level Gate	20V	2A	150 mOhm @ 2A，4.5V	1V @ 250μA	-	320pF @ 16V
	DMG6968UDM-7	Diodes Incorporated	54,000	3 days	-	MOSFET 2N-CH 20V 6.5A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 6.5A SOT-26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-26	850mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	6.5A	24 mOhm @ 6.5A，4.5V	900mV @ 250μA	8.8nC @ 4.5V	143pF @ 10V
	DMG6968UDM-7	Diodes Incorporated	56,964	3 days	-	MOSFET 2N-CH 20V 6.5A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 6.5A SOT-26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-26	850mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	6.5A	24 mOhm @ 6.5A，4.5V	900mV @ 250μA	8.8nC @ 4.5V	143pF @ 10V
	DMG6968UDM-7	Diodes Incorporated	56,964	3 days	-	MOSFET 2N-CH 20V 6.5A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 6.5A SOT-26	-	-	-55°C ~ 150°C (TJ)	SOT-26	850mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	6.5A	24 mOhm @ 6.5A，4.5V	900mV @ 250μA	8.8nC @ 4.5V	143pF @ 10V
	DMG9926UDM-7	Diodes Incorporated	9,000	3 days	-	MOSFET 2N-CH 20V 4.2A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 4.2A SOT-26	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-26	980mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	4.2A	28 mOhm @ 8.2A，4.5V	900mV @ 250μA	8.3nC @ 4.5V	856pF @ 10V
	DMG9926UDM-7	Diodes Incorporated	12,717	3 days	-	MOSFET 2N-CH 20V 4.2A SOT-26 MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 4.2A SOT-26	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-26	980mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	4.2A	28 mOhm @ 8.2A，4.5V	900mV @ 250μA	8.3nC @ 4.5V	856pF @ 10V

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