Drain to Source Voltage (Vdss):
Rds On (Max) @ Id,Vgs:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 6 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging FET Type Drain to Source Voltage (Vdss) Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
CSD86311W1723
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 4.5A 12DSBGA
Tape & Reel (TR) 2 N-Channel (Dual) 25V 39 mOhm @ 2A,8V 1.4V @ 250μA 4nC @ 4.5V 585pF @ 12.5V
CSD86311W1723
Texas Instruments
2,121
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 4.5A 12DSBGA
Cut Tape (CT) 2 N-Channel (Dual) 25V 39 mOhm @ 2A,8V 1.4V @ 250μA 4nC @ 4.5V 585pF @ 12.5V
CSD86311W1723
Texas Instruments
2,121
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 25V 4.5A 12DSBGA
- 2 N-Channel (Dual) 25V 39 mOhm @ 2A,8V 1.4V @ 250μA 4nC @ 4.5V 585pF @ 12.5V
CSD75211W1723
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A 12DSBGA
Tape & Reel (TR) 2 P-Channel (Dual) 20V 40 mOhm @ 2A,4.5V 1.1V @ 250μA 5.9nC @ 4.5V 600pF @ 10V
CSD75211W1723
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A 12DSBGA
Cut Tape (CT) 2 P-Channel (Dual) 20V 40 mOhm @ 2A,4.5V 1.1V @ 250μA 5.9nC @ 4.5V 600pF @ 10V
CSD75211W1723
Texas Instruments
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 4.5A 12DSBGA
- 2 P-Channel (Dual) 20V 40 mOhm @ 2A,4.5V 1.1V @ 250μA 5.9nC @ 4.5V 600pF @ 10V