Supplier Device Package:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Vgs(th) (Max) @ Id:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Discover 7 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
Tape & Reel (TR) - - 2 N-Channel (Dual) Common Drain Standard - - - 12.6nC @ 4.5V -
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
Cut Tape (CT) - - 2 N-Channel (Dual) Common Drain Standard - - - 12.6nC @ 4.5V -
DMN2036UCB4-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFETN-CHAN 24V X2-WLB1616-4
- - - 2 N-Channel (Dual) Common Drain Standard - - - 12.6nC @ 4.5V -
DMN2023UCB4-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH X1-WLB1818-4
Tape & Reel (TR) - X1-WLB1818-4 2 N-Channel (Dual) Logic Level Gate - - - 29nC @ 4.5V -
DMN2023UCB4-7
Diodes Incorporated
2,695
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH X1-WLB1818-4
Cut Tape (CT) - X1-WLB1818-4 2 N-Channel (Dual) Logic Level Gate - - - 29nC @ 4.5V -
DMN2023UCB4-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH X1-WLB1818-4
- - X1-WLB1818-4 2 N-Channel (Dual) Logic Level Gate - - - 29nC @ 4.5V -
DMN2023UCB4-7
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH X1-WLB1818-4
- Automotive,AEC-Q101 X1-WLB1818-4 2 N-Channel (Dual) Common Drain Standard 24V 6A (Ta) 1.3V @ 1mA 37nC @ 4.5V 3333pF @ 10V