Discover 28 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Operating Temperature Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
ZXMHC3A01T8TA
Diodes Incorporated
7,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 30V 2.7A,2A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMHC3A01T8TA
Diodes Incorporated
8,466
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 30V 2.7A,2A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMHC3A01T8TA
Diodes Incorporated
8,466
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 30V 2.7A/2A SM8
- -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 30V 2.7A,2A 120 mOhm @ 2.5A,10V 3V @ 250μA 3.9nC @ 10V 190pF @ 25V
ZXMHC6A07T8TA
Diodes Incorporated
5,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 60V SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 60V 1.6A,1.3A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHC6A07T8TA
Diodes Incorporated
5,298
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 60V SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Logic Level Gate 60V 1.6A,1.3A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHC10A07T8TA
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Standard 100V 1A,800mA 700 mOhm @ 1.5A,10V 4V @ 250μA 2.9nC @ 10V 138pF @ 60V
ZXMHC10A07T8TA
Diodes Incorporated
10,768
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Standard 100V 1A,800mA 700 mOhm @ 1.5A,10V 4V @ 250μA 2.9nC @ 10V 138pF @ 60V
ZXMHC10A07T8TA
Diodes Incorporated
10,768
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N/2P-CH 100V 1A/0.8A SM8
- -55°C ~ 150°C (TJ) SM8 1.3W 2 N and 2 P-Channel (H-Bridge) Standard 100V 1A,800mA 700 mOhm @ 1.5A,10V 4V @ 250μA 2.9nC @ 10V 138pF @ 60V
ZDM4306NTA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2A SOT-223-8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 3W 2 N-Channel (Dual) Standard 60V 2A 330 mOhm @ 3A,10V 3V @ 1mA - 350pF @ 25V
ZDM4306NTC
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2A SOT-223-8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-223 3W 2 N-Channel (Dual) Standard 60V 2A 330 mOhm @ 3A,10V 3V @ 1mA - 350pF @ 25V
ZDM4306NTA
Diodes Incorporated
240
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2A SOT-223-8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 3W 2 N-Channel (Dual) Standard 60V 2A 330 mOhm @ 3A,10V 3V @ 1mA - 350pF @ 25V
ZDM4306NTA
Diodes Incorporated
240
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2A SOT-223-8
- -55°C ~ 150°C (TJ) SM8 3W 2 N-Channel (Dual) Standard 60V 2A 330 mOhm @ 3A,10V 3V @ 1mA - 350pF @ 25V
ZDM4306NTA
Diodes Incorporated
2,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 2A SOT-223-8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 3W 2 N-Channel (Dual) Standard 60V 2A 330 mOhm @ 3A,10V 3V @ 1mA - 350pF @ 25V
ZXMHN6A07T8TA
Diodes Incorporated
1,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
1,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
1,303
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
- -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
250
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
Cut Tape (CT) -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZXMHN6A07T8TA
Diodes Incorporated
250
3 days
-
MOQ: 1  MPQ: 1
MOSFET 4N-CH 60V 1.4A SM8
- -55°C ~ 150°C (TJ) SM8 1.6W 4 N-Channel (H-Bridge) Logic Level Gate 60V 1.4A 300 mOhm @ 1.8A,10V 3V @ 250μA 3.2nC @ 10V 166pF @ 40V
ZDM4206NTA
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 60V 1A SOT-223-8
Tape & Reel (TR) -55°C ~ 150°C (TJ) SOT-223 2.75W 2 N-Channel (Dual) Logic Level Gate 60V 1A 1 Ohm @ 1.5A,10V 3V @ 1mA - 100pF @ 25V