Supplier Device Package:
Drain to Source Voltage (Vdss):
Discover 38 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
AOD609
Alpha & Omega Semiconductor Inc.
70,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 12A TO252-4
Tape & Reel (TR) - -55°C ~ 175°C (TJ) TO-252-4L 2W N and P-Channel,Common Drain Logic Level Gate 40V 12A 30 mOhm @ 12A,10V 3V @ 250μA 10.8nC @ 10V 650pF @ 20V
AOD609
Alpha & Omega Semiconductor Inc.
71,381
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 12A TO252-4
Cut Tape (CT) - -55°C ~ 175°C (TJ) TO-252-4L 2W N and P-Channel,Common Drain Logic Level Gate 40V 12A 30 mOhm @ 12A,10V 3V @ 250μA 10.8nC @ 10V 650pF @ 20V
AOD609
Alpha & Omega Semiconductor Inc.
71,381
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 12A TO252-4
- - -55°C ~ 175°C (TJ) TO-252-4L 2W N and P-Channel,Common Drain Logic Level Gate 40V 12A 30 mOhm @ 12A,10V 3V @ 250μA 10.8nC @ 10V 650pF @ 20V
FDD8424H
ON Semiconductor
60,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
FDD8424H
ON Semiconductor
62,638
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
FDD8424H
ON Semiconductor
62,638
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
- PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
DMG4511SK4-13
Diodes Incorporated
2,500
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V TO252-4L
Tape & Reel (TR) - -55°C ~ 150°C (TJ) TO-252-4L 1.54W N and P-Channel,Common Drain Logic Level Gate 35V 5.3A,5A 35 mOhm @ 8A,10V 3V @ 250μA 18.7nC @ 10V 850pF @ 25V
DMG4511SK4-13
Diodes Incorporated
2,711
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V TO252-4L
Cut Tape (CT) - -55°C ~ 150°C (TJ) TO-252-4L 1.54W N and P-Channel,Common Drain Logic Level Gate 35V 5.3A,5A 35 mOhm @ 8A,10V 3V @ 250μA 18.7nC @ 10V 850pF @ 25V
DMG4511SK4-13
Diodes Incorporated
2,711
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 35V TO252-4L
- - -55°C ~ 150°C (TJ) TO-252-4L 1.54W N and P-Channel,Common Drain Logic Level Gate 35V 5.3A,5A 35 mOhm @ 8A,10V 3V @ 250μA 18.7nC @ 10V 850pF @ 25V
DMC3021LK4-13
Diodes Incorporated
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TO252-4L
Tape & Reel (TR) - -55°C ~ 150°C (TJ) TO-252-4L 2.7W N and P-Channel,Common Drain Logic Level Gate 30V 9.4A,6.8A 21 mOhm @ 7A,10V 2.1V @ 250μA 17.4nC @ 10V 751pF @ 10V
DMC3021LK4-13
Diodes Incorporated
1,228
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TO252-4L
Cut Tape (CT) - -55°C ~ 150°C (TJ) TO-252-4L 2.7W N and P-Channel,Common Drain Logic Level Gate 30V 9.4A,6.8A 21 mOhm @ 7A,10V 2.1V @ 250μA 17.4nC @ 10V 751pF @ 10V
DMC3021LK4-13
Diodes Incorporated
1,228
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V TO252-4L
- - -55°C ~ 150°C (TJ) TO-252-4L 2.7W N and P-Channel,Common Drain Logic Level Gate 30V 9.4A,6.8A 21 mOhm @ 7A,10V 2.1V @ 250μA 17.4nC @ 10V 751pF @ 10V
FDD8424H-F085A
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
FDD8424H-F085A
ON Semiconductor
1,922
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
FDD8424H-F085A
ON Semiconductor
1,922
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 40V 9A/6.5A DPAK
- PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel Logic Level Gate 40V 9A,6.5A 24 mOhm @ 9A,10V 3V @ 250μA 20nC @ 10V 1000pF @ 20V
FDD3510H
ON Semiconductor
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel,Common Drain Logic Level Gate 80V 4.3A,2.8A 80 mOhm @ 4.3A,10V 4V @ 250μA 18nC @ 10V 800pF @ 40V
FDD3510H
ON Semiconductor
702
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel,Common Drain Logic Level Gate 80V 4.3A,2.8A 80 mOhm @ 4.3A,10V 4V @ 250μA 18nC @ 10V 800pF @ 40V
FDD3510H
ON Semiconductor
702
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
- PowerTrench -55°C ~ 150°C (TJ) TO-252-4L 1.3W N and P-Channel,Common Drain Logic Level Gate 80V 4.3A,2.8A 80 mOhm @ 4.3A,10V 4V @ 250μA 18nC @ 10V 800pF @ 40V
AOD603A
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 60V TO252-4L
Tape & Reel (TR) - -55°C ~ 175°C (TJ) TO-252-4L 2W N and P-Channel,Common Drain Logic Level Gate 60V 3.5A,3A 60 mOhm @ 12A,10V 3V @ 250μA 10nC @ 10V 540pF @ 30V
AOD607A
Alpha & Omega Semiconductor Inc.
Inquiry
-
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 30V 8A/12A TO252-4
Tape & Reel (TR) - -55°C ~ 150°C (TJ) TO-252-4L 19W (Tc),30W (Tc) N and P-Channel Complementary Standard 30V 8A (Tc),12A (Tc) 25 mOhm @ 8A,10V,27 mOhm @ 12A,10V 2.6V @ 250μA,2.4V @ 250μA 7nC @ 4.5V,12nC @ 4.5V 395pF @ 15V,730pF @ 15V