- Series:
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- Power - Max:
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- FET Type:
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- FET Feature:
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- Drain to Source Voltage (Vdss):
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Selected conditions:
Discover 50 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Series | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Microsemi Corporation |
69
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 500V 46A SP4
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- | 357W | 4 N-Channel (H-Bridge) | Standard | 500V | 46A | 90 mOhm @ 23A,10V | 5V @ 2.5mA | 123nC @ 10V | 5600pF @ 25V | ||||
Microsemi Corporation |
28
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3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 1000V 18A SP4
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POWER MOS 7 | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A,10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | ||||
Microsemi Corporation |
8
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3 days |
-
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 1000V 18A SP4
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- | 357W | 4 N-Channel (H-Bridge) | Standard | 1000V (1kV) | 18A | 540 mOhm @ 9A,10V | 5V @ 2.5mA | 154nC @ 10V | 4350pF @ 25V | ||||
Microsemi Corporation |
20
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3 days |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 500V 90A SP4
|
- | 694W | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A,10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | ||||
Microsemi Corporation |
Inquiry
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- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 600V 72A SP4
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- | 416W | 2 N-Channel (Half Bridge) | Standard | 600V | 72A | 35 mOhm @ 36A,10V | 3.9V @ 2mA | 518nC @ 10V | 14000pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 600V 39A SP4
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CoolMOS | 250W | 4 N-Channel (H-Bridge) | Standard | 600V | 39A | 70 mOhm @ 39A,10V | 3.9V @ 2.7mA | 259nC @ 10V | 7000pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 90A SP4
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POWER MOS 7 | 694W | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45 mOhm @ 45A,10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 500V 99A SP4
|
- | 781W | 2 N-Channel (Half Bridge) | Standard | 500V | 99A | 39 mOhm @ 49.5A,10V | 5V @ 5mA | 280nC @ 10V | 14000pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1000V 43A SP4
|
- | 780W | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 43A | 210 mOhm @ 21.5A,10V | 5V @ 5mA | 372nC @ 10V | 10400pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1000V 36A SP4
|
- | 694W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1000V (1kV) | 36A | 270 mOhm @ 18A,10V | 5V @ 5mA | 308nC @ 10V | 8700pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1000V 43A SP4
|
- | 780W | 2 N-Channel (Dual) | Standard | 1000V (1kV) | 43A | 210 mOhm @ 21.5A,10V | 5V @ 5mA | 372nC @ 10V | 10400pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 139A SP4
|
- | 390W | 2 N-Channel (Dual) Asymmetrical | Standard | 100V | 139A | 10 mOhm @ 69.5A,10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 100V 278A SP4
|
- | 780W | 2 N-Channel (Dual) | Standard | 100V | 278A | 5 mOhm @ 125A,10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 100V 139A SP4
|
- | 390W | 4 N-Channel (H-Bridge) | Standard | 100V | 139A | 10 mOhm @ 69.5A,10V | 4V @ 2.5mA | 350nC @ 10V | 9875pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 1200V 34A SP4
|
- | 780W | 2 N-Channel (Dual) | Standard | 1200V (1.2kV) | 34A | 348 mOhm @ 17A,10V | 5V @ 5mA | 374nC @ 10V | 10300pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 4N-CH 1200V 17A SP4
|
- | 390W | 4 N-Channel (H-Bridge) | Standard | 1200V (1.2kV) | 17A | 684 mOhm @ 8.5A,10V | 5V @ 2.5mA | 187nC @ 10V | 5155pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 200V 333A SP4
|
- | 1250W | 2 N-Channel (Half Bridge) | Standard | 200V | 333A | 5 mOhm @ 166.5A,10V | 4V @ 8mA | 1184nC @ 10V | 40800pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 200V 104A SP4
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- | 390W | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 104A | 19 mOhm @ 52A,10V | 5V @ 2.5mA | 140nC @ 10V | 7220pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
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MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 200V 89A SP4
|
- | 357W | 2 N-Channel (Dual) Asymmetrical | Standard | 200V | 89A | 24 mOhm @ 44.5A,10V | 5V @ 2.5mA | 112nC @ 10V | 6850pF @ 25V | ||||
Microsemi Corporation |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 200V 333A SP8
|
- | 1250W | 2 N-Channel (Dual) | Standard | 200V | 333A | 5 mOhm @ 166.5A,10V | 4V @ 8mA | 1184nC @ 10V | 40800pF @ 25V |