- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 2 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
17
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3 days |
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 1200V 250A D3
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1100W | 250A | 10 mOhm @ 200A，20V | 2.2V @ 10mA (Typ) | 490nC @ 20V | 9500pF @ 1000V | |||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 1200V 131A D3
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625W | 131A | 20 mOhm @ 100A，20V | 2.2V @ 5mA (Typ) | 246nC @ 20V | 4750pF @ 1000V |
