- Rds On (Max) @ Id，Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Selected conditions:
Discover 3 products
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Power - Max | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id，Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 4N-CH 900V 30A SP2
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250W | 4 N-Channel (H-Bridge) | 900V | 30A | 120 mOhm @ 26A，10V | 3.5V @ 3mA | 270nC @ 10V | 6800pF @ 100V | ||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 600V 66A SP2
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416W | 2 N Channel (Phase Leg) | 600V | 66A | 42 mOhm @ 33A，10V | 5V @ 6mA | 510nC @ 10V | 14600pF @ 25V | ||
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Microsemi Corporation |
Inquiry
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MOQ: 1 MPQ: 1
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MOSFET 2N-CH 900V 59A SP2
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462W | 2 N-Channel (Half Bridge) | 900V | 59A | 60 mOhm @ 52A，10V | 3.5V @ 6mA | 540nC @ 10V | 13600pF @ 100V |
