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- Operating Temperature:
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- Supplier Device Package:
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- Power - Max:
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- FET Type:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id,Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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Discover 32 products
Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
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Image | Part Number | Manufacturer | Quantity | Delivery period | Unit Price | Buy | Description | Packaging | Operating Temperature | Supplier Device Package | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id,Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | ||
Diodes Incorporated |
6,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.3A 6-DFN
|
Tape & Reel (TR) | -65°C ~ 150°C (TJ) | X2-DFN1310-6 | 400mW | 2 N-Channel (Dual) | Standard | 20V | 300mA | 1.5 Ohm @ 10mA,4V | 900mV @ 100μA | - | - | ||||
Diodes Incorporated |
11,275
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.3A 6-DFN
|
Cut Tape (CT) | -65°C ~ 150°C (TJ) | X2-DFN1310-6 | 400mW | 2 N-Channel (Dual) | Standard | 20V | 300mA | 1.5 Ohm @ 10mA,4V | 900mV @ 100μA | - | - | ||||
Diodes Incorporated |
11,275
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2N-CH 20V 0.3A 6-DFN
|
- | -65°C ~ 150°C (TJ) | X2-DFN1310-6 | 400mW | 2 N-Channel (Dual) | Standard | 20V | 300mA | 1.5 Ohm @ 10mA,4V | 900mV @ 100μA | - | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 6-DFN
|
Tape & Reel (TR) | -65°C ~ 150°C (TJ) | 6-DFN1612 (1.2x1.6) | 500mW | N and P-Channel | Logic Level Gate | 20V | 750mA,600mA | 550 mOhm @ 540mA,4.5V | 1V @ 250μA | - | 150pF @ 16V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 6-DFN
|
Cut Tape (CT) | -65°C ~ 150°C (TJ) | 6-DFN1612 (1.2x1.6) | 500mW | N and P-Channel | Logic Level Gate | 20V | 750mA,600mA | 550 mOhm @ 540mA,4.5V | 1V @ 250μA | - | 150pF @ 16V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V 6-DFN
|
- | -65°C ~ 150°C (TJ) | 6-DFN1612 (1.2x1.6) | 500mW | N and P-Channel | Logic Level Gate | 20V | 750mA,600mA | 550 mOhm @ 540mA,4.5V | 1V @ 250μA | - | 150pF @ 16V | ||||
TT Electronics/Optek Technology |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 90V 2A/1.1A SMD
|
Bulk | -55°C ~ 150°C (TJ) | 6-SMD | 500mW | N and P-Channel | Standard | 90V | 2A,1.1A | 5 Ohm @ 1A,10V | 2.5V @ 1mA | - | 70pF @ 25V | ||||
TT Electronics/Optek Technology |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 90V 2A/1.1A SMD
|
Bulk | -55°C ~ 150°C (TJ) | 6-SMD | 500mW | N and P-Channel | Standard | 90V | 2A,1.1A | 5 Ohm @ 1A,10V | 2.5V @ 1mA | - | 70pF @ 25V | ||||
TT Electronics/Optek Technology |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 90V 2A/1.1A SMD
|
Bulk | -55°C ~ 150°C (TJ) | 6-SMD | 500mW | N and P-Channel | Standard | 90V | 2A,1.1A | 5 Ohm @ 1A,10V | 2.5V @ 1mA | - | 70pF @ 25V | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN2718-6
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | X3-DSN2718-6 | 2.4W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 35.2nC @ 4.5V | 2360pF @ 6V | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN2718-6
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | X3-DSN2718-6 | 2.4W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 35.2nC @ 4.5V | 2360pF @ 6V | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN2718-6
|
- | -55°C ~ 150°C (TJ) | X3-DSN2718-6 | 2.4W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 35.2nC @ 4.5V | 2360pF @ 6V | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFETN-CHAN 12V X4-DSN3118-6
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | - | 1.1W | 2 N-Channel (Dual) Common Drain | Standard | - | - | - | - | 68.6nC @ 4V | - | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFETN-CHAN 12V X4-DSN3118-6
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | - | 1.1W | 2 N-Channel (Dual) Common Drain | Standard | - | - | - | - | 68.6nC @ 4V | - | ||||
Diodes Incorporated |
3,000
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFETN-CHAN 12V X4-DSN3118-6
|
- | -55°C ~ 150°C (TJ) | - | 1.1W | 2 N-Channel (Dual) Common Drain | Standard | - | - | - | - | 68.6nC @ 4V | - | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN3518-6
|
Tape & Reel (TR) | -55°C ~ 150°C (TJ) | X3-DSN3518-6 | 2.67W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 56.5nC @ 4.5V | 3315pF @ 6V | ||||
Diodes Incorporated |
2,990
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN3518-6
|
Cut Tape (CT) | -55°C ~ 150°C (TJ) | X3-DSN3518-6 | 2.67W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 56.5nC @ 4.5V | 3315pF @ 6V | ||||
Diodes Incorporated |
2,990
|
3 days |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CHANNEL X3-DSN3518-6
|
- | -55°C ~ 150°C (TJ) | X3-DSN3518-6 | 2.67W | 2 N-Channel | Standard | - | - | - | 1.3V @ 1mA | 56.5nC @ 4.5V | 3315pF @ 6V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET N/P-CH 20V X2DFN0806-6
|
- | -55°C ~ 150°C (TJ) | X2-DFN0806-6 | 300mW | 1 N-Channel,1 P-Channel | Standard | 20V | 455mA (Ta),328mA (Ta) | 990 mOhm @ 100mA,4.5V,1.9 Ohm @ 100mA,4.5V | 1V @ 250μA | 0.41nC @ 4.5V,0.4nC @ 4.5V | 31pF @ 15V,28.5pF @ 15V | ||||
Diodes Incorporated |
Inquiry
|
- |
-
|
MOQ: 1 MPQ: 1
|
MOSFET 2 N-CH 20V X2DFN0806-6
|
- | -55°C ~ 150°C (TJ) | X2-DFN0806-6 | 310mW | 2 N-Channel | Standard | 20V | 455mA (Ta) | 990 mOhm @ 100mA,4.5V | 1V @ 250μA | 0.41nC @ 4.5V | 31pF @ 15V |