FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMN2016UTS-13	Diodes Incorporated	20,000	3 days	-	MOSFET 2N-CH 20V 8.58A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 8.58A 8-TSSOP	Tape & Reel (TR)	-	880mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	8.58A	14.5 mOhm @ 9.4A，4.5V	1V @ 250μA	16.5nC @ 4.5V	1495pF @ 10V
	DMN2016UTS-13	Diodes Incorporated	21,928	3 days	-	MOSFET 2N-CH 20V 8.58A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 8.58A 8-TSSOP	Cut Tape (CT)	-	880mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	8.58A	14.5 mOhm @ 9.4A，4.5V	1V @ 250μA	16.5nC @ 4.5V	1495pF @ 10V
	DMN2016UTS-13	Diodes Incorporated	21,928	3 days	-	MOSFET 2N-CH 20V 8.58A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 8.58A 8-TSSOP	-	-	880mW	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	8.58A	14.5 mOhm @ 9.4A，4.5V	1V @ 250μA	16.5nC @ 4.5V	1495pF @ 10V
	DMP2035UTS-13	Diodes Incorporated	2,500	3 days	-	MOSFET 2P-CH 20V 6.04A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 6.04A 8TSSOP	Tape & Reel (TR)	-	890mW	2 P-Channel (Dual) Common Drain	Logic Level Gate	20V	6.04A	35 mOhm @ 4A，4.5V	1V @ 250μA	15.4nC @ 4.5V	1610pF @ 10V
	DMP2035UTS-13	Diodes Incorporated	3,204	3 days	-	MOSFET 2P-CH 20V 6.04A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 6.04A 8TSSOP	Cut Tape (CT)	-	890mW	2 P-Channel (Dual) Common Drain	Logic Level Gate	20V	6.04A	35 mOhm @ 4A，4.5V	1V @ 250μA	15.4nC @ 4.5V	1610pF @ 10V
	DMP2035UTS-13	Diodes Incorporated	3,204	3 days	-	MOSFET 2P-CH 20V 6.04A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 6.04A 8TSSOP	-	-	890mW	2 P-Channel (Dual) Common Drain	Logic Level Gate	20V	6.04A	35 mOhm @ 4A，4.5V	1V @ 250μA	15.4nC @ 4.5V	1610pF @ 10V
	SI6968BEDQ-T1-GE3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 20V 5.2A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8-TSSOP	Tape & Reel (TR)	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	SI6968BEDQ-T1-GE3	Vishay Siliconix	8,743	3 days	-	MOSFET 2N-CH 20V 5.2A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8-TSSOP	Cut Tape (CT)	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	SI6968BEDQ-T1-GE3	Vishay Siliconix	8,743	3 days	-	MOSFET 2N-CH 20V 5.2A 8-TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8-TSSOP	-	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	SI6954ADQ-T1-GE3	Vishay Siliconix	9,000	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	Tape & Reel (TR)	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6954ADQ-T1-GE3	Vishay Siliconix	9,984	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	Cut Tape (CT)	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6954ADQ-T1-GE3	Vishay Siliconix	9,984	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	-	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6954ADQ-T1-E3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	Tape & Reel (TR)	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6954ADQ-T1-E3	Vishay Siliconix	7,064	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	Cut Tape (CT)	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6954ADQ-T1-E3	Vishay Siliconix	7,064	3 days	-	MOSFET 2N-CH 30V 3.1A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 3.1A 8TSSOP	-	TrenchFET	830mW	2 N-Channel (Dual)	Logic Level Gate	30V	3.1A	53 mOhm @ 3.4A，10V	1V @ 250μA (Min)	16nC @ 10V	-
	SI6968BEDQ-T1-E3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 20V 5.2A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8TSSOP	Tape & Reel (TR)	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	SI6968BEDQ-T1-E3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 20V 5.2A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8TSSOP	Cut Tape (CT)	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	SI6968BEDQ-T1-E3	Vishay Siliconix	3,000	3 days	-	MOSFET 2N-CH 20V 5.2A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2N-CH 20V 5.2A 8TSSOP	-	TrenchFET	1W	2 N-Channel (Dual) Common Drain	Logic Level Gate	20V	5.2A	22 mOhm @ 6.5A，4.5V	1.6V @ 250μA	18nC @ 4.5V	-
	TSM6866SDCA RVG	Taiwan Semiconductor Corporation	3,000	3 days	-	MOSFET 2 N-CH 20V 6A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2 N-CH 20V 6A 8TSSOP	Tape & Reel (TR)	-	1.6W	2 N-Channel (Dual)	Standard	20V	6A (Ta)	30 mOhm @ 6A，4.5V	600mV @ 250μA	5nC @ 4.5V	565pF @ 8V
	TSM6866SDCA RVG	Taiwan Semiconductor Corporation	5,980	3 days	-	MOSFET 2 N-CH 20V 6A 8TSSOP MOQ: 1 MPQ: 1	MOSFET 2 N-CH 20V 6A 8TSSOP	Cut Tape (CT)	-	1.6W	2 N-Channel (Dual)	Standard	20V	6A (Ta)	30 mOhm @ 6A，4.5V	600mV @ 250μA	5nC @ 4.5V	565pF @ 8V

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