FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Supplier Device Package：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Supplier Device Package	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	FG6943010R	Panasonic Electronic Components	232,000	3 days	-	MOSFET N/P-CH 30V 0.1A SSMINI6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.1A SSMINI6	Tape & Reel (TR)	-	-40°C ~ 85°C (TJ)	SSMini6-F3-B	-	N and P-Channel	Standard	30V	100mA	-	-	-	-
	FG6943010R	Panasonic Electronic Components	237,036	3 days	-	MOSFET N/P-CH 30V 0.1A SSMINI6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.1A SSMINI6	Cut Tape (CT)	-	-40°C ~ 85°C (TJ)	SSMini6-F3-B	-	N and P-Channel	Standard	30V	100mA	-	-	-	-
	FG6943010R	Panasonic Electronic Components	237,036	3 days	-	MOSFET N/P-CH 30V 0.1A SSMINI6 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V 0.1A SSMINI6	-	-	-40°C ~ 85°C (TJ)	SSMini6-F3-B	-	N and P-Channel	Standard	30V	100mA	-	-	-	-
	DMG1016V-7	Diodes Incorporated	9,000	3 days	-	MOSFET N/P-CH 20V SOT563 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT563	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	N and P-Channel	Logic Level Gate	20V	870mA，640mA	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMG1016V-7	Diodes Incorporated	11,524	3 days	-	MOSFET N/P-CH 20V SOT563 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT563	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	N and P-Channel	Logic Level Gate	20V	870mA，640mA	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMG1016V-7	Diodes Incorporated	11,524	3 days	-	MOSFET N/P-CH 20V SOT563 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT563	-	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	N and P-Channel	Logic Level Gate	20V	870mA，640mA	400 mOhm @ 600mA，4.5V	1V @ 250μA	0.74nC @ 4.5V	60.67pF @ 16V
	DMG1026UV-7	Diodes Incorporated	54,000	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	1.8V @ 250μA	0.45nC @ 10V	32pF @ 25V
	DMG1026UV-7	Diodes Incorporated	56,032	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	1.8V @ 250μA	0.45nC @ 10V	32pF @ 25V
	DMG1026UV-7	Diodes Incorporated	56,032	3 days	-	MOSFET 2N-CH 60V 0.41A SOT-563 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.41A SOT-563	-	-	-55°C ~ 150°C (TJ)	SOT-563	580mW	2 N-Channel (Dual)	Logic Level Gate	60V	410mA	1.8 Ohm @ 500mA，10V	1.8V @ 250μA	0.45nC @ 10V	32pF @ 25V
	DMG1023UV-7	Diodes Incorporated	36,000	3 days	-	MOSFET 2P-CH 20V 1.03A SOT563 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 1.03A SOT563	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	2 P-Channel (Dual)	Logic Level Gate	20V	1.03A	750 mOhm @ 430mA，4.5V	1V @ 250μA	0.62nC @ 4.5V	59.76pF @ 16V
	DMG1023UV-7	Diodes Incorporated	37,570	3 days	-	MOSFET 2P-CH 20V 1.03A SOT563 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 1.03A SOT563	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	2 P-Channel (Dual)	Logic Level Gate	20V	1.03A	750 mOhm @ 430mA，4.5V	1V @ 250μA	0.62nC @ 4.5V	59.76pF @ 16V
	DMG1023UV-7	Diodes Incorporated	37,570	3 days	-	MOSFET 2P-CH 20V 1.03A SOT563 MOQ: 1 MPQ: 1	MOSFET 2P-CH 20V 1.03A SOT563	-	-	-55°C ~ 150°C (TJ)	SOT-563	530mW	2 P-Channel (Dual)	Logic Level Gate	20V	1.03A	750 mOhm @ 430mA，4.5V	1V @ 250μA	0.62nC @ 4.5V	59.76pF @ 16V
	EM6K1T2R	ROHM Semiconductor	8,000	3 days	-	MOSFET 2N-CH 30V .1A EMT6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V .1A EMT6	Tape & Reel (TR)	-	150°C (TJ)	EMT6	150mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	8 Ohm @ 10mA，4V	1.5V @ 100μA	-	13pF @ 5V
	EM6K1T2R	ROHM Semiconductor	17,979	3 days	-	MOSFET 2N-CH 30V .1A EMT6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V .1A EMT6	Cut Tape (CT)	-	150°C (TJ)	EMT6	150mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	8 Ohm @ 10mA，4V	1.5V @ 100μA	-	13pF @ 5V
	EM6K1T2R	ROHM Semiconductor	17,979	3 days	-	MOSFET 2N-CH 30V .1A EMT6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V .1A EMT6	-	-	150°C (TJ)	EMT6	150mW	2 N-Channel (Dual)	Logic Level Gate	30V	100mA	8 Ohm @ 10mA，4V	1.5V @ 100μA	-	13pF @ 5V
	SI1026X-T1-GE3	Vishay Siliconix	108,000	3 days	-	MOSFET 2N-CH 60V 0.305A SC89-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.305A SC89-6	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	SC-89-6	250mW	2 N-Channel (Dual)	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA，10V	2.5V @ 250μA	0.6nC @ 4.5V	30pF @ 25V
	SI1026X-T1-GE3	Vishay Siliconix	110,511	3 days	-	MOSFET 2N-CH 60V 0.305A SC89-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.305A SC89-6	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	SC-89-6	250mW	2 N-Channel (Dual)	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA，10V	2.5V @ 250μA	0.6nC @ 4.5V	30pF @ 25V
	SI1026X-T1-GE3	Vishay Siliconix	110,511	3 days	-	MOSFET 2N-CH 60V 0.305A SC89-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.305A SC89-6	-	-	-55°C ~ 150°C (TJ)	SC-89-6	250mW	2 N-Channel (Dual)	Logic Level Gate	60V	305mA	1.4 Ohm @ 500mA，10V	2.5V @ 250μA	0.6nC @ 4.5V	30pF @ 25V
	SI1025X-T1-GE3	Vishay Siliconix	15,000	3 days	-	MOSFET 2P-CH 60V 0.19A SC-89 MOQ: 1 MPQ: 1	MOSFET 2P-CH 60V 0.19A SC-89	Tape & Reel (TR)	TrenchFET	-55°C ~ 150°C (TJ)	SC-89-6	250mW	2 P-Channel (Dual)	Logic Level Gate	60V	190mA	4 Ohm @ 500mA，10V	3V @ 250μA	1.7nC @ 15V	23pF @ 25V
	SI1025X-T1-GE3	Vishay Siliconix	17,865	3 days	-	MOSFET 2P-CH 60V 0.19A SC-89 MOQ: 1 MPQ: 1	MOSFET 2P-CH 60V 0.19A SC-89	Cut Tape (CT)	TrenchFET	-55°C ~ 150°C (TJ)	SC-89-6	250mW	2 P-Channel (Dual)	Logic Level Gate	60V	190mA	4 Ohm @ 500mA，10V	3V @ 250μA	1.7nC @ 15V	23pF @ 25V

Sent successfully!