Operating Temperature:
Drain to Source Voltage (Vdss):
Discover 140 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
DMN1029UFDB-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 N-Channel (Dual) Standard 12V 5.6A 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
DMN1029UFDB-7
Diodes Incorporated
7,078
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 N-Channel (Dual) Standard 12V 5.6A 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
DMN1029UFDB-7
Diodes Incorporated
7,078
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 12V 5.6A 6UDFN
- - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 N-Channel (Dual) Standard 12V 5.6A 29 mOhm @ 5A,4.5V 1V @ 250μA 19.6nC @ 8V 914pF @ 6V
PMCPB5530X,115
Nexperia USA Inc.
42,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
Tape & Reel (TR) - -55°C ~ 150°C (TJ) DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 900mV @ 250μA 21.7nC @ 4.5V 660pF @ 10V
PMCPB5530X,115
Nexperia USA Inc.
44,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
Cut Tape (CT) - -55°C ~ 150°C (TJ) DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 900mV @ 250μA 21.7nC @ 4.5V 660pF @ 10V
PMCPB5530X,115
Nexperia USA Inc.
44,532
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V 6HUSON
- - -55°C ~ 150°C (TJ) DFN2020-6 490mW N and P-Channel Logic Level Gate 20V 5.3A,3.4A 34 mOhm @ 3A,4.5V 900mV @ 250μA 21.7nC @ 4.5V 660pF @ 10V
DMN3032LFDBQ-7
Diodes Incorporated
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.2A U-DFN2020
Tape & Reel (TR) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1W 2 N-Channel (Dual) Standard 30V 6.2A 30 mOhm @ 5.8A,10V 2V @ 250μA 10.6nC @ 10V 500pF @ 15V
DMN3032LFDBQ-7
Diodes Incorporated
14,750
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.2A U-DFN2020
Cut Tape (CT) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1W 2 N-Channel (Dual) Standard 30V 6.2A 30 mOhm @ 5.8A,10V 2V @ 250μA 10.6nC @ 10V 500pF @ 15V
DMN3032LFDBQ-7
Diodes Incorporated
14,750
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 6.2A U-DFN2020
- - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1W 2 N-Channel (Dual) Standard 30V 6.2A 30 mOhm @ 5.8A,10V 2V @ 250μA 10.6nC @ 10V 500pF @ 15V
FDMA6023PZT
ON Semiconductor
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A 6MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 60 mOhm @ 3.6A,4.5V 1.5V @ 250μA 17nC @ 4.5V 885pF @ 10V
FDMA6023PZT
ON Semiconductor
13,494
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A 6MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 60 mOhm @ 3.6A,4.5V 1.5V @ 250μA 17nC @ 4.5V 885pF @ 10V
FDMA6023PZT
ON Semiconductor
13,494
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.6A 6MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.6A 60 mOhm @ 3.6A,4.5V 1.5V @ 250μA 17nC @ 4.5V 885pF @ 10V
DMC1028UFDB-7
Diodes Incorporated
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 12V/20V 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.36W N and P-Channel Standard 12V,20V 6A,3.4A 25 mOhm @ 5.2A,4.5V 1V @ 250μA 18.5nC @ 8V 787pF @ 6V
DMC1028UFDB-7
Diodes Incorporated
9,987
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 12V/20V 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.36W N and P-Channel Standard 12V,20V 6A,3.4A 25 mOhm @ 5.2A,4.5V 1V @ 250μA 18.5nC @ 8V 787pF @ 6V
DMC1028UFDB-7
Diodes Incorporated
9,987
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 12V/20V 6UDFN
- - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.36W N and P-Channel Standard 12V,20V 6A,3.4A 25 mOhm @ 5.2A,4.5V 1V @ 250μA 18.5nC @ 8V 787pF @ 6V
DMP1046UFDB-7
Diodes Incorporated
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 3.8A 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 12V 3.8A 61 mOhm @ 3.6A,4.5V 1V @ 250μA 17.9nC @ 8V 915pF @ 6V
DMP1046UFDB-7
Diodes Incorporated
7,042
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 3.8A 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 12V 3.8A 61 mOhm @ 3.6A,4.5V 1V @ 250μA 17.9nC @ 8V 915pF @ 6V
DMP1046UFDB-7
Diodes Incorporated
7,042
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 12V 3.8A 6UDFN
- - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 1.4W 2 P-Channel (Dual) Standard 12V 3.8A 61 mOhm @ 3.6A,4.5V 1V @ 250μA 17.9nC @ 8V 915pF @ 6V
DMP2075UFDB-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET P-CH 20V 6UDFN
Tape & Reel (TR) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 700mW (Ta) 2 P-Channel (Dual) Standard 20V 3.8A (Ta) 75 mOhm @ 2.9A,4.5V 1.4V @ 250μA 8.8nC @ 4.5V 642pF @ 10V
DMP2075UFDB-7
Diodes Incorporated
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET P-CH 20V 6UDFN
Cut Tape (CT) - -55°C ~ 150°C (TJ) U-DFN2020-6 (Type B) 700mW (Ta) 2 P-Channel (Dual) Standard 20V 3.8A (Ta) 75 mOhm @ 2.9A,4.5V 1.4V @ 250μA 8.8nC @ 4.5V 642pF @ 10V