Drain to Source Voltage (Vdss):
Discover 57 products
Image Part Number Manufacturer Quantity Delivery period Unit Price Buy Description Packaging Series Operating Temperature Supplier Device Package Power - Max FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id,Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
FDMA3023PZ
ON Semiconductor
18,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.9A MICROFET6
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 30V 2.9A 90 mOhm @ 2.9A,4.5V 1V @ 250μA 11nC @ 4.5V 530pF @ 15V
FDMA3023PZ
ON Semiconductor
18,410
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.9A MICROFET6
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 30V 2.9A 90 mOhm @ 2.9A,4.5V 1V @ 250μA 11nC @ 4.5V 530pF @ 15V
FDMA3023PZ
ON Semiconductor
18,410
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 30V 2.9A MICROFET6
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 30V 2.9A 90 mOhm @ 2.9A,4.5V 1V @ 250μA 11nC @ 4.5V 530pF @ 15V
FDMA1032CZ
ON Semiconductor
111,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V MICROFET 2X2
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW N and P-Channel Logic Level Gate 20V 3.7A,3.1A 68 mOhm @ 3.7A,4.5V 1.5V @ 250μA 6nC @ 4.5V 340pF @ 10V
FDMA1032CZ
ON Semiconductor
114,544
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V MICROFET 2X2
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW N and P-Channel Logic Level Gate 20V 3.7A,3.1A 68 mOhm @ 3.7A,4.5V 1.5V @ 250μA 6nC @ 4.5V 340pF @ 10V
FDMA1032CZ
ON Semiconductor
114,544
3 days
-
MOQ: 1  MPQ: 1
MOSFET N/P-CH 20V MICROFET 2X2
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW N and P-Channel Logic Level Gate 20V 3.7A,3.1A 68 mOhm @ 3.7A,4.5V 1.5V @ 250μA 6nC @ 4.5V 340pF @ 10V
FDMA1023PZ
ON Semiconductor
9,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.7A MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.7A 72 mOhm @ 3.7A,4.5V 1.5V @ 250μA 12nC @ 4.5V 655pF @ 10V
FDMA1023PZ
ON Semiconductor
10,668
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.7A MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.7A 72 mOhm @ 3.7A,4.5V 1.5V @ 250μA 12nC @ 4.5V 655pF @ 10V
FDMA1023PZ
ON Semiconductor
10,668
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.7A MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.7A 72 mOhm @ 3.7A,4.5V 1.5V @ 250μA 12nC @ 4.5V 655pF @ 10V
FDMA1024NZ
ON Semiconductor
6,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6-MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 N-Channel (Dual) Logic Level Gate 20V 5A 54 mOhm @ 5A,4.5V 1V @ 250μA 7.3nC @ 4.5V 500pF @ 10V
FDMA1024NZ
ON Semiconductor
8,421
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6-MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 N-Channel (Dual) Logic Level Gate 20V 5A 54 mOhm @ 5A,4.5V 1V @ 250μA 7.3nC @ 4.5V 500pF @ 10V
FDMA1024NZ
ON Semiconductor
8,421
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 20V 5A 6-MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 N-Channel (Dual) Logic Level Gate 20V 5A 54 mOhm @ 5A,4.5V 1V @ 250μA 7.3nC @ 4.5V 500pF @ 10V
IRLHS6376TRPBF
Infineon Technologies
12,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A PQFN
Tape & Reel (TR) HEXFET -55°C ~ 150°C (TJ) 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 2.8nC @ 4.5V 270pF @ 25V
IRLHS6376TRPBF
Infineon Technologies
14,050
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
Cut Tape (CT) HEXFET -55°C ~ 150°C (TJ) 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 2.8nC @ 4.5V 270pF @ 25V
IRLHS6376TRPBF
Infineon Technologies
14,050
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.6A 2X2 PQFN
- HEXFET -55°C ~ 150°C (TJ) 6-PQFN (2x2) 1.5W 2 N-Channel (Dual) Logic Level Gate 30V 3.6A 63 mOhm @ 3.4A,4.5V 1.1V @ 10μA 2.8nC @ 4.5V 270pF @ 25V
FDMA1029PZ
ON Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.1A MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.1A 95 mOhm @ 3.1A,4.5V 1.5V @ 250μA 10nC @ 4.5V 540pF @ 10V
FDMA1029PZ
ON Semiconductor
6,018
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.1A MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.1A 95 mOhm @ 3.1A,4.5V 1.5V @ 250μA 10nC @ 4.5V 540pF @ 10V
FDMA1029PZ
ON Semiconductor
6,018
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2P-CH 20V 3.1A MICROFET
- PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 P-Channel (Dual) Logic Level Gate 20V 3.1A 95 mOhm @ 3.1A,4.5V 1.5V @ 250μA 10nC @ 4.5V 540pF @ 10V
FDMA3028N
ON Semiconductor
3,000
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.8A 6MICROFET
Tape & Reel (TR) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 N-Channel (Dual) Logic Level Gate 30V 3.8A 68 mOhm @ 3.8A,4.5V 1.5V @ 250μA 5.2nC @ 5V 375pF @ 15V
FDMA3028N
ON Semiconductor
3,449
3 days
-
MOQ: 1  MPQ: 1
MOSFET 2N-CH 30V 3.8A 6MICROFET
Cut Tape (CT) PowerTrench -55°C ~ 150°C (TJ) 6-MicroFET (2x2) 700mW 2 N-Channel (Dual) Logic Level Gate 30V 3.8A 68 mOhm @ 3.8A,4.5V 1.5V @ 250μA 5.2nC @ 5V 375pF @ 15V