FETs, MOSFETs - Arrays - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Operating Temperature：

Power - Max：

FET Type：

FET Feature：

Drain to Source Voltage (Vdss)：

Current - Continuous Drain (Id) @ 25°C：

Rds On (Max) @ Id，Vgs：

Vgs(th) (Max) @ Id：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
Image	Part Number	Manufacturer	Quantity	Delivery period	Unit Price	Buy	Description	Packaging	Series	Operating Temperature	Power - Max	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id，Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
	DMN3190LDW-7	Diodes Incorporated	51,000	3 days	-	MOSFET 2N-CH 30V 1A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 1A SOT363	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	320mW	2 N-Channel (Dual)	Logic Level Gate	30V	1A	190 mOhm @ 1.3A，10V	2.8V @ 250μA	2nC @ 10V	87pF @ 20V
	DMN3190LDW-7	Diodes Incorporated	51,910	3 days	-	MOSFET 2N-CH 30V 1A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 1A SOT363	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	320mW	2 N-Channel (Dual)	Logic Level Gate	30V	1A	190 mOhm @ 1.3A，10V	2.8V @ 250μA	2nC @ 10V	87pF @ 20V
	DMN3190LDW-7	Diodes Incorporated	51,910	3 days	-	MOSFET 2N-CH 30V 1A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 1A SOT363	-	-	-55°C ~ 150°C (TJ)	320mW	2 N-Channel (Dual)	Logic Level Gate	30V	1A	190 mOhm @ 1.3A，10V	2.8V @ 250μA	2nC @ 10V	87pF @ 20V
	BSS84DW-7-F	Diodes Incorporated	99,000	3 days	-	MOSFET 2P-CH 50V 0.13A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 50V 0.13A SC70-6	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	300mW	2 P-Channel (Dual)	Logic Level Gate	50V	130mA	10 Ohm @ 100mA，5V	2V @ 1mA	-	45pF @ 25V
	BSS84DW-7-F	Diodes Incorporated	101,426	3 days	-	MOSFET 2P-CH 50V 0.13A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 50V 0.13A SC70-6	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	300mW	2 P-Channel (Dual)	Logic Level Gate	50V	130mA	10 Ohm @ 100mA，5V	2V @ 1mA	-	45pF @ 25V
	BSS84DW-7-F	Diodes Incorporated	101,426	3 days	-	MOSFET 2P-CH 50V 0.13A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2P-CH 50V 0.13A SC70-6	-	-	-55°C ~ 150°C (TJ)	300mW	2 P-Channel (Dual)	Logic Level Gate	50V	130mA	10 Ohm @ 100mA，5V	2V @ 1mA	-	45pF @ 25V
	BSS138DW-7-F	Diodes Incorporated	126,000	3 days	-	MOSFET 2N-CH 50V 0.2A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.2A SC70-6	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	200mW	2 N-Channel (Dual)	Logic Level Gate	50V	200mA	3.5 Ohm @ 220mA，10V	1.5V @ 250μA	-	50pF @ 10V
	BSS138DW-7-F	Diodes Incorporated	129,032	3 days	-	MOSFET 2N-CH 50V 0.2A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.2A SC70-6	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	200mW	2 N-Channel (Dual)	Logic Level Gate	50V	200mA	3.5 Ohm @ 220mA，10V	1.5V @ 250μA	-	50pF @ 10V
	BSS138DW-7-F	Diodes Incorporated	129,032	3 days	-	MOSFET 2N-CH 50V 0.2A SC70-6 MOQ: 1 MPQ: 1	MOSFET 2N-CH 50V 0.2A SC70-6	-	-	-55°C ~ 150°C (TJ)	200mW	2 N-Channel (Dual)	Logic Level Gate	50V	200mA	3.5 Ohm @ 220mA，10V	1.5V @ 250μA	-	50pF @ 10V
	DMC2004DWK-7	Diodes Incorporated	63,000	3 days	-	MOSFET N/P-CH 20V SOT-363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT-363	Tape & Reel (TR)	-	-65°C ~ 150°C (TJ)	250mW	N and P-Channel	Logic Level Gate	20V	540mA，430mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMC2004DWK-7	Diodes Incorporated	65,396	3 days	-	MOSFET N/P-CH 20V SOT-363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT-363	Cut Tape (CT)	-	-65°C ~ 150°C (TJ)	250mW	N and P-Channel	Logic Level Gate	20V	540mA，430mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMC2004DWK-7	Diodes Incorporated	65,396	3 days	-	MOSFET N/P-CH 20V SOT-363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 20V SOT-363	-	-	-65°C ~ 150°C (TJ)	250mW	N and P-Channel	Logic Level Gate	20V	540mA，430mA	550 mOhm @ 540mA，4.5V	1V @ 250μA	-	150pF @ 16V
	DMC3400SDW-13	Diodes Incorporated	10,000	3 days	-	MOSFET N/P-CH 30V SOT363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V SOT363	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	310mW	N and P-Channel	Standard	30V	650mA，450mA	400 mOhm @ 590mA，10V	1.6V @ 250μA	1.4nC @ 10V	55pF @ 15V
	DMC3400SDW-13	Diodes Incorporated	10,212	3 days	-	MOSFET N/P-CH 30V SOT363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V SOT363	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	310mW	N and P-Channel	Standard	30V	650mA，450mA	400 mOhm @ 590mA，10V	1.6V @ 250μA	1.4nC @ 10V	55pF @ 15V
	DMC3400SDW-13	Diodes Incorporated	10,212	3 days	-	MOSFET N/P-CH 30V SOT363 MOQ: 1 MPQ: 1	MOSFET N/P-CH 30V SOT363	-	-	-55°C ~ 150°C (TJ)	310mW	N and P-Channel	Standard	30V	650mA，450mA	400 mOhm @ 590mA，10V	1.6V @ 250μA	1.4nC @ 10V	55pF @ 15V
	DMN65D8LDW-7	Diodes Incorporated	33,000	3 days	-	MOSFET 2N-CH 60V 0.18A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.18A SOT363	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	180mA	6 Ohm @ 115mA，10V	2V @ 250μA	0.87nC @ 10V	22pF @ 25V
	DMN65D8LDW-7	Diodes Incorporated	34,745	3 days	-	MOSFET 2N-CH 60V 0.18A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.18A SOT363	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	180mA	6 Ohm @ 115mA，10V	2V @ 250μA	0.87nC @ 10V	22pF @ 25V
	DMN65D8LDW-7	Diodes Incorporated	34,745	3 days	-	MOSFET 2N-CH 60V 0.18A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 60V 0.18A SOT363	-	-	-55°C ~ 150°C (TJ)	300mW	2 N-Channel (Dual)	Logic Level Gate	60V	180mA	6 Ohm @ 115mA，10V	2V @ 250μA	0.87nC @ 10V	22pF @ 25V
	DMN3190LDW-13	Diodes Incorporated	40,000	3 days	-	MOSFET 2N-CH 30V 1A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 1A SOT363	Tape & Reel (TR)	-	-55°C ~ 150°C (TJ)	320mW	2 N-Channel (Dual)	Logic Level Gate	30V	1A	190 mOhm @ 1.3A，10V	2.8V @ 250μA	2nC @ 10V	87pF @ 20V
	DMN3190LDW-13	Diodes Incorporated	45,838	3 days	-	MOSFET 2N-CH 30V 1A SOT363 MOQ: 1 MPQ: 1	MOSFET 2N-CH 30V 1A SOT363	Cut Tape (CT)	-	-55°C ~ 150°C (TJ)	320mW	2 N-Channel (Dual)	Logic Level Gate	30V	1A	190 mOhm @ 1.3A，10V	2.8V @ 250μA	2nC @ 10V	87pF @ 20V

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